23ghz基于inp (1.55 /spl mu/m)的伪晶MQW脊波导激光器

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482529

H. Yoon, A. Gutierrez-Aitken, J. Singh, P. Bhattacharya, S. Lourdudoss

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引用次数: 1

摘要

为了在弱折射率引导条件下获得较低光子密度下的大带宽，我们研究了基于inp的多量子阱共面脊波导激光器的特性。我们还研究了应变补偿结构在实现低阈值、高速激光器方面的好处。在2/spl倍/200 /spl μ /m/sup /2 /激光下测得最大调制带宽为23 GHz。这是工作在1.55 /spl mu/m的脊波导激光器测量到的最高带宽。该调制带宽下的光子密度仅为1.8/spl倍/10/sup 16/ cm/sup -3/，而埋置异质结构器件典型的光子密度为/spl倍/10/sup 17/ cm/sup -3/。

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23 GHz InP-based (1.55 /spl mu/m) pseudomorphic MQW ridge waveguide lasers

We have studied the characteristics of InP-based multiple quantum well (MQW) coplanar ridge waveguide lasers in order to obtain large bandwidth under weakly index-guided conditions at relatively low photon density. We have also investigated the benefits of the strain compensated structure in achieving low-threshold, high-speed lasers. A maximum modulation bandwidth of 23 GHz was measured for a 2/spl times/200 /spl mu/m/sup 2/ laser. This is the highest bandwidth measured for a ridge waveguide laser operating at 1.55 /spl mu/m. The photon density for this modulation bandwidth was only 1.8/spl times/10/sup 16/ cm/sup -3/, compared to /spl sim/10/sup 17/ cm/sup -3/ typical in buried heterostructure devices.

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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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