{"title":"共振隧道和量子集成电路","authors":"A. Seabaugh","doi":"10.1109/CORNEL.1995.482540","DOIUrl":null,"url":null,"abstract":"Devices fabricated at the scaling limits of conventional technology must either contend with quantum-mechanical tunneling as a parasitic effect or incorporate tunneling into the device function. Taking the latter approach, the phenomenon of resonant tunneling between epitaxially-grown double-barrier heterostructures shows significant promise for extending integrated circuit performance both before and beyond the post-shrink era. Recent progress in this technology is reviewed.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Resonant tunneling and quantum integrated circuits\",\"authors\":\"A. Seabaugh\",\"doi\":\"10.1109/CORNEL.1995.482540\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Devices fabricated at the scaling limits of conventional technology must either contend with quantum-mechanical tunneling as a parasitic effect or incorporate tunneling into the device function. Taking the latter approach, the phenomenon of resonant tunneling between epitaxially-grown double-barrier heterostructures shows significant promise for extending integrated circuit performance both before and beyond the post-shrink era. Recent progress in this technology is reviewed.\",\"PeriodicalId\":268401,\"journal\":{\"name\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1995.482540\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1995.482540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resonant tunneling and quantum integrated circuits
Devices fabricated at the scaling limits of conventional technology must either contend with quantum-mechanical tunneling as a parasitic effect or incorporate tunneling into the device function. Taking the latter approach, the phenomenon of resonant tunneling between epitaxially-grown double-barrier heterostructures shows significant promise for extending integrated circuit performance both before and beyond the post-shrink era. Recent progress in this technology is reviewed.