利用低温mbe生长的砷化镓制备新型高灵敏度p-i-n MODFET光电探测器

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482438

S. Subramanian, D. Schulte, L. Ungler, T. Plant, J. R. Arthur

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引用次数: 0

摘要

本文首次报道了一种将p-i-n二极管和调制掺杂场效应晶体管(MODFET)结合在单一器件中的新型高灵敏度光电探测器。该器件有两种可能的工作模式，垂直p-i-n模式和横向MODFET模式。该器件在MODFET模式下具有/spl sim/95 a /W的高响应度，是p-i-n模式下的/spl sim/6000倍。该器件在低温生长的砷化镓层中砷团簇和/或陷阱产生的砷化镓亚带隙区域也具有显著的光响应。

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A novel high sensitivity p-i-n MODFET photodetector using low-temperature-MBE grown GaAs

A novel, high sensitivity photodetector which combines a p-i-n diode and a modulation doped field effect transistor (MODFET) in a single device is reported for the first time. There are two possible modes of operation of the device, a vertical p-i-n mode and a lateral MODFET mode. The device exhibits a high responsivity of /spl sim/95 A/W in the MODFET mode which is /spl sim/6000 times that in the p-i-n mode. The device also has significant photo-response in the GaAs subbandgap region arising from the arsenic clusters and/or the traps present in the low-temperature grown GaAs layer.

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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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