低温生长GaAs损耗介电异质结构场效应晶体管

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482551

K. Lipka, R. Splingart, R. Westphalen, E. Kohn, D. Théron, B. Boudart, G. Salmer, L. Pond, C. Weitzel

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引用次数: 3

摘要

利用/spl sigma/-LT-GaAs首次实现并评价了损耗介质场效应管。从直流输出特性中提取的3.5 W/mm射频功率能力为克服肖特基栅极场效应管器件功率限制的场再分配提供了证据。对于1 /spl mu/m器件，已获得60 GHz f/sub max/ values。栅极-漏极击穿电压高于30v，在2ghz与5/spl middot/10/sup 12/ cm/sup -2/的通道片电荷一起被确定。损耗电介质特有的寄生现象已被广泛消除。然而，特定于/spl sigma/-LT-GaAs材料的限制仍然需要克服，这是讨论。

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Low temperature grown GaAs lossy dielectric heterostructure FET

A lossy dielectric FET has been realized and evaluated for the first time by employing /spl sigma/-LT-GaAs. 3.5 W/mm RF power capability extracted from the DC output characteristics give evidence for a field redistribution which overcomes the power limitation of Schottky gate FET devices. 60 GHz f/sub max/ values have been obtained for 1 /spl mu/m devices. Gate-drain breakdown voltages above 30 V have been identified at 2 GHz in conjunction with a channel sheet charge of 5/spl middot/10/sup 12/ cm/sup -2/. Parasitics, specific to the lossy dielectric have been widely eliminated. However limitations specific to the /spl sigma/-LT-GaAs material need still to be overcome, which is discussed.

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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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