High uniformity 75 GHz junction HEMTs (JHEMTs) using a dry-etch gate technology

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482550

J. Shealy, M. Hafizi, M. Thompson, H. Sun, C. Hooper, Utkarsh Mishra, L. Nguyen

引用次数: 2

Abstract

This paper demonstrates a high uniformity 75 GHz (f/sub /spl tau//) GaInAs junction HEMT (JHEMT) technology with /spl plusmn/5 percent variations in the DC and RF parameters using a selective dry-etch gate process. This technology is attractive for the manufacturing of low cost MMICs.

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采用干蚀刻栅技术的高均匀性75ghz结hemt (jhemt)

本文演示了一种高均匀性的75 GHz (f/sub /spl tau//) GaInAs结HEMT (JHEMT)技术，该技术使用选择性干蚀刻栅工艺，其DC和RF参数变化为/spl plusmn/ 5%。该技术对低成本mmic的制造具有吸引力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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