The growth of semiconductor quantum wires: a Monte Carlo study

Abstract

The formation of semiconductor quantum wires on the top of ridges and by deposition through a shadowing mask has been simulated by the Monte Carlo technique. The simulation model includes tetrahedral lattice coordination of the semiconductor material, atom-atom interactions out to second-nearest neighbors, and surface reconstruction effects. The growth of quantum wires with the top (001) surface and (111) sidewalls is demonstrated. The formation of (111) sidewalls of higher quality than that of the top (001) surface has been obtained due to the larger diffusion coefficient of adatoms on the (111) plane. The dependence of the quality of quantum wires on the substrate temperature is shown.