蓝绿色激光二极管

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482414

R. Gunshor, J. Han, A. Nurmikko

{"title":"蓝绿色激光二极管","authors":"R. Gunshor, J. Han, A. Nurmikko","doi":"10.1109/CORNEL.1995.482414","DOIUrl":null,"url":null,"abstract":"The current status, as well as some key issues related to the growth and characterization of II-VI blue/green laser diodes are reviewed. The Zn(Se,Te) graded contact to p-ZnSe is effective in supporting the room-temperature CW operation of green (508 nm) laser diodes while device lifetimes are currently limited by the formation of dark defects in the active region. The role of extended and point defects in degradation will be discussed. Additional problems have arisen in the move to shorter wavelengths. For example, an observed increase of resistivity with increased bandgap energy has been associated with the formation of AX centers, a DX like behavior for acceptors.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Blue-green laser diodes\",\"authors\":\"R. Gunshor, J. Han, A. Nurmikko\",\"doi\":\"10.1109/CORNEL.1995.482414\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The current status, as well as some key issues related to the growth and characterization of II-VI blue/green laser diodes are reviewed. The Zn(Se,Te) graded contact to p-ZnSe is effective in supporting the room-temperature CW operation of green (508 nm) laser diodes while device lifetimes are currently limited by the formation of dark defects in the active region. The role of extended and point defects in degradation will be discussed. Additional problems have arisen in the move to shorter wavelengths. For example, an observed increase of resistivity with increased bandgap energy has been associated with the formation of AX centers, a DX like behavior for acceptors.\",\"PeriodicalId\":268401,\"journal\":{\"name\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1995.482414\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1995.482414","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

综述了蓝/绿激光二极管的研究现状，以及与II-VI型蓝/绿激光二极管的生长和表征有关的一些关键问题。Zn(Se,Te)与p-ZnSe的梯度接触有效地支持了绿色(508 nm)激光二极管的室温连续工作，而器件寿命目前受到有源区暗缺陷形成的限制。扩展缺陷和点缺陷在退化中的作用将被讨论。在向短波长的移动过程中还出现了其他问题。例如，观察到的电阻率随着带隙能量的增加而增加，这与AX中心的形成有关，这是受体的一种类似DX的行为。

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Blue-green laser diodes

The current status, as well as some key issues related to the growth and characterization of II-VI blue/green laser diodes are reviewed. The Zn(Se,Te) graded contact to p-ZnSe is effective in supporting the room-temperature CW operation of green (508 nm) laser diodes while device lifetimes are currently limited by the formation of dark defects in the active region. The role of extended and point defects in degradation will be discussed. Additional problems have arisen in the move to shorter wavelengths. For example, an observed increase of resistivity with increased bandgap energy has been associated with the formation of AX centers, a DX like behavior for acceptors.

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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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