Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wells

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482528

C. Chua, Z. Zhu, Y. Lo, M. Hong, R. Bhat

引用次数: 1

Abstract

We present a 1.53 /spl mu/m strain-compensated MQW VCSEL using wafer-fused AlAs/GaAs DBR mirrors. Under room temperature pulsed pumping, we measured excellent dynamic single mode characteristics, a low threshold current of 10 mA, and a linewidth of less than 0.1 nm.

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利用AlAs/GaAs反射镜和应变补偿量子阱的长波VCSELs

我们提出了一个1.53 /spl mu/m的应变补偿MQW VCSEL，使用晶圆熔接的AlAs/GaAs DBR反射镜。在室温脉冲泵浦下，我们测量了优异的动态单模特性，低阈值电流为10 mA，线宽小于0.1 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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