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Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs 28nm FD-SOI mosfet动态变异性的统计分析
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948798
E. Ioannidis, S. Haendler, C. Theodorou, N. Planes, C. Dimitriadis, G. Ghibaudo
{"title":"Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs","authors":"E. Ioannidis, S. Haendler, C. Theodorou, N. Planes, C. Dimitriadis, G. Ghibaudo","doi":"10.1109/ESSDERC.2014.6948798","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948798","url":null,"abstract":"The impact of the dynamic variability due to low frequency and RTS fluctuations on single MOSFET operation from 28nm FD-SOI technology is investigated for the first time. It is shown that, for small rise time of ramp gate voltage, the drain current characteristics Id(Vg) exhibit a huge sweep-to-sweep dispersion due to the low frequency noise. Such a single device dynamic variability, which scales as the reciprocal square root of device area, is added to the static mismatch contribution and could amount up to ≈30% of static variability sources.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114749209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI 随机电报信号对28nm UTBB FD-SOI中6T高密度SRAM的影响
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948766
K. Akyel, L. Ciampolini, O. Thomas, D. Turgis, G. Ghibaudo
{"title":"Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI","authors":"K. Akyel, L. Ciampolini, O. Thomas, D. Turgis, G. Ghibaudo","doi":"10.1109/ESSDERC.2014.6948766","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948766","url":null,"abstract":"This work investigates the impact of Random Telegraph Signal (RTS) noise on a 6 Transistors single P-well Static Random Access Memory (6T-SRAM) manufactured in 28nm Ultra-Thin Body and Buried Oxide Fully-Depleted Silicon-On-Insulator (UTBB FD-SOI) technology. A SPICE-level bias-and time-dependent RTS model peculiar to UTBB FD-SOI, which considers both front- and back-gate of the device as RTS sources, is presented. The Bit-Error-Rate is evaluated on silicon dies through the write-ability (WA) failure criterion and with a dedicated back-biasing strategy. Simulations evidence the role of RTS-induced dynamic variability with respect to process variability and show a good agreement with measurements.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115675988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Size-dependent electron mobility in InAs nanowires InAs纳米线中与尺寸相关的电子迁移率
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948824
E. G. Marín, F. Ruiz, A. Godoy, I. M. Tienda-Luna, F. Gámiz
{"title":"Size-dependent electron mobility in InAs nanowires","authors":"E. G. Marín, F. Ruiz, A. Godoy, I. M. Tienda-Luna, F. Gámiz","doi":"10.1109/ESSDERC.2014.6948824","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948824","url":null,"abstract":"This work studies the electron mobility in InAs nanowires, taking into account the contribution of the main scattering mechanisms that determine its behavior. Moreover, we analyze its dependence on the nanowire diameter, carrier density and population of the Γ, L and X valleys. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. We also show that the electron mobility of the L valleys is much lower than the one of the Γ valley, because of the higher conduction effective mass. The combination of the higher population of the L valleys and the stronger impact of the surface roughness scattering degrades the characteristic high mobility of InAs as the nanowire diameter decreases.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131179373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background pattern 奈米NAND快闪记忆体中循环诱导的阈值电压不稳定性:对阵列背景图案的敏感性
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948756
G. M. Paolucci, M. Bertuccio, C. M. Compagnoni, S. Beltrami, A. Spinelli, A. Lacaita, A. Visconti
{"title":"Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background pattern","authors":"G. M. Paolucci, M. Bertuccio, C. M. Compagnoni, S. Beltrami, A. Spinelli, A. Lacaita, A. Visconti","doi":"10.1109/ESSDERC.2014.6948756","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948756","url":null,"abstract":"This work investigates cycling-induced threshold-voltage instabilities in nanoscale NAND Flash cells as a function of the array background pattern. Instabilities are mainly the result of charge detrapping from the cell tunnel oxide during post-cycling idle/bake periods and represent one of the major reliability issues for multi-level devices. Results reveal, first of all, that instabilities in a (victim) cell do not depend only on its memory state, but also on the memory state of its first neighboring (aggressor) cells. This new interference effect is shown to decrease in magnitude for higher threshold-voltage levels of the victim cell and to come mainly from an interaction with aggressor cells in the bit-line direction. From this evidence, a physical picture explaining the phenomenon and its main dependences is provided.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127743538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reliability of capacitive RF MEMS switches subjected to repetitive impact cycles at different temperatures 电容式射频MEMS开关在不同温度下反复冲击循环的可靠性
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948760
M. Barbato, A. Cester, V. Mulloni, B. Margesin, G. Pasquale, A. Somà, G. Meneghesso
{"title":"Reliability of capacitive RF MEMS switches subjected to repetitive impact cycles at different temperatures","authors":"M. Barbato, A. Cester, V. Mulloni, B. Margesin, G. Pasquale, A. Somà, G. Meneghesso","doi":"10.1109/ESSDERC.2014.6948760","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948760","url":null,"abstract":"The analysis of contact degradation in a not controlled atmosphere (air) at different temperatures in microstructures with electrostatic actuation is the main topic of this study. Different types of devices are subjected to 1 million impact cycles at three different temperatures (25 °C, 40 °C and 55 °C). The electrical properties are shown and the results are explained: a major operating temperature lead to a more reliable contact because the membrane internal stress decreases with the temperature, lowering the restoring force of the switch. The use of modified floating metal in the fabrication of the devices can improves the reliability of the contact producing a significant improvement in the lifetime.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127650979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Flexible and stretchable electronics for wearable healthcare 用于可穿戴医疗保健的柔性和可拉伸电子产品
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948796
J. V. D. Brand, M. D. Kok, A. Sridhar, M. Cauwe, R. Verplancke, F. Bossuyt, J. D. Baets, J. Vanfleteren
{"title":"Flexible and stretchable electronics for wearable healthcare","authors":"J. V. D. Brand, M. D. Kok, A. Sridhar, M. Cauwe, R. Verplancke, F. Bossuyt, J. D. Baets, J. Vanfleteren","doi":"10.1109/ESSDERC.2014.6948796","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948796","url":null,"abstract":"Measuring the quality of human health and well-being is one of the key growth areas in our society. Preferably, these measurements are done as unobtrusive as possible. These sensoric devices are then to be integrated directly on the human body as a patch or integrated into garments. This requires the devices to be very thin, flexible and sometimes even stretchable. An overview will be given of recent technology developments in this domain and concrete application examples will be shown.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129362131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 高压、高温工况下封装层的TCAD建模
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948826
I. Imperiale, S. Reggiani, E. Gnani, A. Gnudi, G. Baccarani, L. Nguyen, M. Denison
{"title":"TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime","authors":"I. Imperiale, S. Reggiani, E. Gnani, A. Gnudi, G. Baccarani, L. Nguyen, M. Denison","doi":"10.1109/ESSDERC.2014.6948826","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948826","url":null,"abstract":"In high-voltage integrated circuits operating at high temperatures, charge transport phenomena can occur in the encapsulation layer as a consequence of the electric field spreading out from the high-voltage bondpads/bondwires. In this work, the most relevant features of epoxy resins commonly used in the high-voltage packaging industry have been modelled and implemented in a commercial TCAD tool. Although the study has been performed on a 2D simulation domain, it is shown that very good agreement with measurements can be obtained, provided that appropriate boundary conditions are taken into account. The TCAD investigation highlights the role played by metallization and wires during a high-voltage stress over a wide temperature range.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117028889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Effects of constant voltage stress on organic complementary logic inverters 恒压应力对有机互补逻辑逆变器的影响
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948819
N. Wrachien, A. Cester, Nicolò Lago, G. Meneghesso, R. D'Alpaos, A. Stefani, G. Turatti, M. Muccini
{"title":"Effects of constant voltage stress on organic complementary logic inverters","authors":"N. Wrachien, A. Cester, Nicolò Lago, G. Meneghesso, R. D'Alpaos, A. Stefani, G. Turatti, M. Muccini","doi":"10.1109/ESSDERC.2014.6948819","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948819","url":null,"abstract":"We subjected all-organic complementary inverters to constant voltage stress. We found a 20% maximum variation of DC inverter parameters after a 104-s stress. The largest degradation was in the delay times, which increase up to a factor 7. This is due to the threshold voltage variation in pTFTs and the mobility reduction in nTFTs.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116783960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strain insb基器件的孔迁移率:依赖于表面取向、本体厚度和应变
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948773
P. Chang, L. Zeng, Xiaoyan Liu, G. Du
{"title":"Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strain","authors":"P. Chang, L. Zeng, Xiaoyan Liu, G. Du","doi":"10.1109/ESSDERC.2014.6948773","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948773","url":null,"abstract":"This work presents an investigation on hole mobility in InSb-based ultra-thin body (UTB) devices with arbitrary surface orientation, body thickness and biaxial strain. The anisotropic band structures with quantum confinement are computed using a fully self-consistent solver for six-band k·p Schrödinger and Poisson equations. Hole mobility is computed using the Kubo-Greenwood formalism accounting for nonpolar acoustic and optical phonons, polar optical phonons and surface roughness scattering. The models are calibrated by fitting the experimental data. Our results suggest that for TB<;10nm, mobility trend with surface orientation and channel directions for InSb devices is: (110)/[T10]>(111)>(110)/[001]>(001), where devices with (111) have more excellent behavior than for Si. In addition, biaxial compressive strain introduces maximum mobility gain in the (110)/[110] case. Nevertheless, (110)/[110] is the optimal surface and channel direction for InSb-based UTB devices, followed by (111) orientation.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114593615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment 集成4h -碳化硅二极管桥整流器的高温(773 K)环境
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948777
Shiqian Shao, Wei-Cheng Lien, A. Maralani, A. Pisano
{"title":"Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment","authors":"Shiqian Shao, Wei-Cheng Lien, A. Maralani, A. Pisano","doi":"10.1109/ESSDERC.2014.6948777","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948777","url":null,"abstract":"In this paper, we demonstrate the stable operation of integrated 4H-silicon carbide (SiC) diode bridge rectifier circuits at high temperature up to 773 K for the first time. The turn-on voltages of the fabricated 4H-SiC pn diode are 2.6 V and 1.4 V at room temperature and 773 K, respectively, with a low shifting rate of 2.2 mV/K. The integration of the 4H-SiC diode bridge rectifier circuit was achieved with contact and interconnect metallization technique for high temperature. The demonstration of the extremely high temperature operation of the integrated 4H-SiC diode bridge rectifier circuits brings promising applications in harsh environment electronics and sensing.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115478115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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