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2014 44th European Solid State Device Research Conference (ESSDERC)最新文献

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Compact model for parametric instability under arbitrary stress waveform 任意应力波形下参数失稳的紧凑模型
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948812
F. Alagi, M. Rossetti, R. Stella, Emanuele Viganò, P. Raynaud
{"title":"Compact model for parametric instability under arbitrary stress waveform","authors":"F. Alagi, M. Rossetti, R. Stella, Emanuele Viganò, P. Raynaud","doi":"10.1109/ESSDERC.2014.6948812","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948812","url":null,"abstract":"A deterministic compact model of instability is presented, capable of simulating reversible parametric drift under any periodic stress waveform and suitable for the implementation in a commercial simulator (Eldo UDRM). The methodology has been applied to NBTI-induced threshold voltage drift; an example is shown, in which recovery simulation is crucial for circuit design.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114970420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Breakdown investigation in GaN-based MIS-HEMT devices 基于氮化镓的MIS-HEMT器件击穿研究
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948839
F. A. Marino, D. Bisi, M. Meneghini, G. Verzellesi, E. Zanoni, M. V. Hove, S. You, S. Decoutere, D. Marcon, S. Stoffels, N. Ronchi, G. Meneghesso
{"title":"Breakdown investigation in GaN-based MIS-HEMT devices","authors":"F. A. Marino, D. Bisi, M. Meneghini, G. Verzellesi, E. Zanoni, M. V. Hove, S. You, S. Decoutere, D. Marcon, S. Stoffels, N. Ronchi, G. Meneghesso","doi":"10.1109/ESSDERC.2014.6948839","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948839","url":null,"abstract":"Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate. Based on combined experimental data and bi-dimensional numerical simulation we demonstrate that many physical mechanisms can contribute to increase the leakage current leading to the final breakdown of the device. In particular we show how band-to-band phenomena, rather than impact ionization, can be responsible of the premature breakdown even in double-heterostructure HEMTs.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123773069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs 全耗尽mosfet中磁电阻的迁移谱分析
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948847
G. Umana-Membreno, S. Chang, M. Bawedin, J. Antoszewski, S. Cristoloveanu, L. Faraone
{"title":"Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs","authors":"G. Umana-Membreno, S. Chang, M. Bawedin, J. Antoszewski, S. Cristoloveanu, L. Faraone","doi":"10.1109/ESSDERC.2014.6948847","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948847","url":null,"abstract":"High-resolution mobility spectrum analysis has been employed to study the magnetic-field dependent geometrical magnetoresistance characteristics of planar FD-SOI MOSFETs with 10 nm thick transistor channel layer. It is shown that transport in the Si channel is due to two well-defined electron species. According to self-consistent Poisson-Schrdinger calculations, these species correspond to carriers in two distinct subbands within the Si channel region which arise from strong carrier confinement and volume inversion. The mobility peak of the first sub-band was found to occur under gate bias conditions that result in a minimum perpendicular effective electric field.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"214 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122381611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Innovative manufacturing of large-area electronics 大面积电子产品创新制造
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948793
L. Occhipinti
{"title":"Innovative manufacturing of large-area electronics","authors":"L. Occhipinti","doi":"10.1109/ESSDERC.2014.6948793","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948793","url":null,"abstract":"This work will outline the main challenges and opportunities for manufacturing large-area electronics with application perspectives in multiple market sectors. It tackle the technical challenges of multi-functional system integration of large-area electronics (LAE) in order to achieve low-cost manufacturing and the necessary performance of multifunctional LAE systems. Some aspects of the major requirements and needs in the field of wearable devices for healthcare, sport and fitness are addressed in more details.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129766075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Identifying failure mechanisms in LDMOS transistors by analytical stability analysis 利用分析稳定性分析方法确定LDMOS晶体管的失效机理
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948825
A. Ferrara, P. Steeneken, B. Boksteen, A. Heringa, A. Scholten, J. Schmitz, R. Hueting
{"title":"Identifying failure mechanisms in LDMOS transistors by analytical stability analysis","authors":"A. Ferrara, P. Steeneken, B. Boksteen, A. Heringa, A. Scholten, J. Schmitz, R. Hueting","doi":"10.1109/ESSDERC.2014.6948825","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948825","url":null,"abstract":"In this work, analytical stability equations are derived and combined with a physics-based model of an LDMOS transistor in order to identify the primary cause of failure in different operating and bias conditions. It is found that there is a gradual boundary between an electrical failure region at high drain voltage and a thermal failure region at high junction temperature. The theoretical results are mapped onto a 3D space comprising gate-width normalized drain current, drain voltage and junction temperature, allowing an immediate visualization of the different failure mechanisms. The validity of the proposed analysis is supported by measurements of the safe operating limits of silicon-on-insulator (SOI) LDMOS transistors.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130398381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 交流应力条件下LDMOS器件HCS降解的TCAD分析
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948828
F. Monti, S. Reggiani, G. Barone, E. Gnani, A. Gnudi, G. Baccarani, S. Poli, M.-Y Chuang, W. Tian, D. Varghese, R. Wise
{"title":"TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions","authors":"F. Monti, S. Reggiani, G. Barone, E. Gnani, A. Gnudi, G. Baccarani, S. Poli, M.-Y Chuang, W. Tian, D. Varghese, R. Wise","doi":"10.1109/ESSDERC.2014.6948828","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948828","url":null,"abstract":"Different AC pulsed stress signals have been applied to an n-type LDMOS with shallow-trench isolation (STI). The HCS degradation curves have been measured on wafer by varying frequency and duty-cycle under a high-VDS stress for both low and high Vgs biases. The linear drain current drifts have been also investigated through TCAD predictions under AC stress conditions for the first time. A quantitative explanation of the dependence on frequency and duty cycle has been obtained using the new approach based on physical models. An extended analysis of the HCS degradation in a real switching application through a resistive load has been reported to gain an insight on the role played by the peak-HCS rates during the rising/falling edges.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130536797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk InAs-Si异质结纳米线隧道场效应管的分析:极限约束与体积
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948772
H. Carrillo-Nuñez, M. Luisier, A. Schenk
{"title":"Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk","authors":"H. Carrillo-Nuñez, M. Luisier, A. Schenk","doi":"10.1109/ESSDERC.2014.6948772","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948772","url":null,"abstract":"Extremely narrow and bulk-like p-type InAs-Si nanowire TFETs are studied using a full-band and atomistic quantum transport simulator based on the sp3d5s* tight-binding model and a drift-diffusion TCAD tool. As third option, the WKB approximation has been adapted to work in heterostructures through a careful choice of the imaginary dispersion. It is found that for ultra-scaled InAs-Si nanowire TFETs, the WKB approximation and the quantum transport results agree very well, suggesting that the former could be applied to larger hetero-TFET structures and considerably reduce the simulation time while keeping a high accuracy.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124267169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs 异质结和同质结隧道场效应管电位分布的准二维半解析模型
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948810
Federica Villani, E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani
{"title":"A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs","authors":"Federica Villani, E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani","doi":"10.1109/ESSDERC.2014.6948810","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948810","url":null,"abstract":"A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs is developed and compared with full-quantum simulation data. It will be shown that the pure analytical solution perfectly matches the k-p data at high VDS. However, a coupling with the numerical solution of the 1D Poisson equation in the transverse direction is necessary at low VDS, in order to properly describe the charge density in equilibrium with the drain contact. With such an approach we are able to correctly predict the potential profile for both the linear and saturation regimes.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130014684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Current dependence of the piezoresistive coefficients of CMOS FETs on (100) silicon (100)硅上CMOS fet压阻系数的电流依赖性
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948761
S. Hussain, R. Jaeger, J. Suhling
{"title":"Current dependence of the piezoresistive coefficients of CMOS FETs on (100) silicon","authors":"S. Hussain, R. Jaeger, J. Suhling","doi":"10.1109/ESSDERC.2014.6948761","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948761","url":null,"abstract":"Orthogonal pairs of MOS transistor are well known to make excellent high-resolution stress sensors on (100) silicon. In order to properly design these sensors, circuit designers need an understanding of the operating point dependence of the piezoresistive coefficients (pi-coefficients) of the PMOS and NMOS devices. This paper presents the new results for the drain current dependence of the key pi-coefficients needed for application of CMOS stress sensors, namely Π44p and ΠDn. It is demonstrated that uniaxial stress can be utilized to calibrate both the normal stress and shear stress sensors if the temperature is maintained sufficiently constant during calibration. Coefficient values are related to drain current, thereby providing the information necessary to make appropriate operating point choices for the design of CMOS stress sensors, and are also correlated with surface mobility in the devices.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124626409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
IR-optimized silicon demodulating detector with 3-dimensional electrodes 具有三维电极的红外优化硅解调探测器
2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI: 10.1109/ESSDERC.2014.6948787
L. Pancheri, F. Savazzi, G. Betta, D. Stoppa, M. Boscardin
{"title":"IR-optimized silicon demodulating detector with 3-dimensional electrodes","authors":"L. Pancheri, F. Savazzi, G. Betta, D. Stoppa, M. Boscardin","doi":"10.1109/ESSDERC.2014.6948787","DOIUrl":"https://doi.org/10.1109/ESSDERC.2014.6948787","url":null,"abstract":"A novel electro-optical demodulating detector with 3-dimensional electrodes is presented in this paper. Thanks to a large substrate thickness, this device can combine high responsivity and demodulation contrast in the infrared spectral region, as needed in Time-of-Flight optical ranging applications. Proof-of-concept large-area detectors are fabricated on Floating Zone silicon, using Deep Reactive Ion Etching to form through-silicon columnar electrodes. The device operation principle is validated by experimental and simulation results. TCAD modeling is used to design detectors with scaled geometry suitable for integration in hybrid image sensors.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128360099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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