异质结和同质结隧道场效应管电位分布的准二维半解析模型

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948810

Federica Villani, E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani

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引用次数: 8

摘要

建立了异质结和同质结隧道场效应管的准二维半解析模型，并与全量子模拟数据进行了比较。结果表明，纯解析解与高VDS下的k-p数据完全吻合。然而，为了恰当地描述与漏极接触平衡的电荷密度，必须在低VDS下与一维泊松方程的横向数值解耦合。通过这种方法，我们能够正确地预测线性和饱和状态的潜在剖面。

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A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs

A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs is developed and compared with full-quantum simulation data. It will be shown that the pure analytical solution perfectly matches the k-p data at high VDS. However, a coupling with the numerical solution of the 1D Poisson equation in the transverse direction is necessary at low VDS, in order to properly describe the charge density in equilibrium with the drain contact. With such an approach we are able to correctly predict the potential profile for both the linear and saturation regimes.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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