{"title":"InAs-Si异质结纳米线隧道场效应管的分析:极限约束与体积","authors":"H. Carrillo-Nuñez, M. Luisier, A. Schenk","doi":"10.1109/ESSDERC.2014.6948772","DOIUrl":null,"url":null,"abstract":"Extremely narrow and bulk-like p-type InAs-Si nanowire TFETs are studied using a full-band and atomistic quantum transport simulator based on the sp3d5s* tight-binding model and a drift-diffusion TCAD tool. As third option, the WKB approximation has been adapted to work in heterostructures through a careful choice of the imaginary dispersion. It is found that for ultra-scaled InAs-Si nanowire TFETs, the WKB approximation and the quantum transport results agree very well, suggesting that the former could be applied to larger hetero-TFET structures and considerably reduce the simulation time while keeping a high accuracy.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk\",\"authors\":\"H. Carrillo-Nuñez, M. Luisier, A. Schenk\",\"doi\":\"10.1109/ESSDERC.2014.6948772\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Extremely narrow and bulk-like p-type InAs-Si nanowire TFETs are studied using a full-band and atomistic quantum transport simulator based on the sp3d5s* tight-binding model and a drift-diffusion TCAD tool. As third option, the WKB approximation has been adapted to work in heterostructures through a careful choice of the imaginary dispersion. It is found that for ultra-scaled InAs-Si nanowire TFETs, the WKB approximation and the quantum transport results agree very well, suggesting that the former could be applied to larger hetero-TFET structures and considerably reduce the simulation time while keeping a high accuracy.\",\"PeriodicalId\":262652,\"journal\":{\"name\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2014.6948772\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948772","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk
Extremely narrow and bulk-like p-type InAs-Si nanowire TFETs are studied using a full-band and atomistic quantum transport simulator based on the sp3d5s* tight-binding model and a drift-diffusion TCAD tool. As third option, the WKB approximation has been adapted to work in heterostructures through a careful choice of the imaginary dispersion. It is found that for ultra-scaled InAs-Si nanowire TFETs, the WKB approximation and the quantum transport results agree very well, suggesting that the former could be applied to larger hetero-TFET structures and considerably reduce the simulation time while keeping a high accuracy.
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