F. A. Marino, D. Bisi, M. Meneghini, G. Verzellesi, E. Zanoni, M. V. Hove, S. You, S. Decoutere, D. Marcon, S. Stoffels, N. Ronchi, G. Meneghesso
{"title":"基于氮化镓的MIS-HEMT器件击穿研究","authors":"F. A. Marino, D. Bisi, M. Meneghini, G. Verzellesi, E. Zanoni, M. V. Hove, S. You, S. Decoutere, D. Marcon, S. Stoffels, N. Ronchi, G. Meneghesso","doi":"10.1109/ESSDERC.2014.6948839","DOIUrl":null,"url":null,"abstract":"Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate. Based on combined experimental data and bi-dimensional numerical simulation we demonstrate that many physical mechanisms can contribute to increase the leakage current leading to the final breakdown of the device. In particular we show how band-to-band phenomena, rather than impact ionization, can be responsible of the premature breakdown even in double-heterostructure HEMTs.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Breakdown investigation in GaN-based MIS-HEMT devices\",\"authors\":\"F. A. Marino, D. Bisi, M. Meneghini, G. Verzellesi, E. Zanoni, M. V. Hove, S. You, S. Decoutere, D. Marcon, S. Stoffels, N. Ronchi, G. Meneghesso\",\"doi\":\"10.1109/ESSDERC.2014.6948839\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate. Based on combined experimental data and bi-dimensional numerical simulation we demonstrate that many physical mechanisms can contribute to increase the leakage current leading to the final breakdown of the device. In particular we show how band-to-band phenomena, rather than impact ionization, can be responsible of the premature breakdown even in double-heterostructure HEMTs.\",\"PeriodicalId\":262652,\"journal\":{\"name\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"151 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2014.6948839\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948839","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Breakdown investigation in GaN-based MIS-HEMT devices
Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate. Based on combined experimental data and bi-dimensional numerical simulation we demonstrate that many physical mechanisms can contribute to increase the leakage current leading to the final breakdown of the device. In particular we show how band-to-band phenomena, rather than impact ionization, can be responsible of the premature breakdown even in double-heterostructure HEMTs.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
