28nm FD-SOI mosfet动态变异性的统计分析

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948798

E. Ioannidis, S. Haendler, C. Theodorou, N. Planes, C. Dimitriadis, G. Ghibaudo

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引用次数: 11

摘要

本文首次研究了由低频和RTS波动引起的动态变化对28nm FD-SOI技术单MOSFET工作的影响。结果表明，在斜坡栅电压上升时间较小的情况下，由于低频噪声的影响，漏极电流特性Id(Vg)呈现出巨大的扫频色散。这样的单个器件动态可变性，其尺度为器件面积的倒数平方根，被添加到静态不匹配贡献中，并且可能高达约30%的静态可变性源。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs

The impact of the dynamic variability due to low frequency and RTS fluctuations on single MOSFET operation from 28nm FD-SOI technology is investigated for the first time. It is shown that, for small rise time of ramp gate voltage, the drain current characteristics Id(Vg) exhibit a huge sweep-to-sweep dispersion due to the low frequency noise. Such a single device dynamic variability, which scales as the reciprocal square root of device area, is added to the static mismatch contribution and could amount up to ≈30% of static variability sources.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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