Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment

Abstract

In this paper, we demonstrate the stable operation of integrated 4H-silicon carbide (SiC) diode bridge rectifier circuits at high temperature up to 773 K for the first time. The turn-on voltages of the fabricated 4H-SiC pn diode are 2.6 V and 1.4 V at room temperature and 773 K, respectively, with a low shifting rate of 2.2 mV/K. The integration of the 4H-SiC diode bridge rectifier circuit was achieved with contact and interconnect metallization technique for high temperature. The demonstration of the extremely high temperature operation of the integrated 4H-SiC diode bridge rectifier circuits brings promising applications in harsh environment electronics and sensing.