2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)最新文献

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Recognizing facial images using Gabor Wavelets, DCT-Neural Network, Hybrid Spatial Feature Interdependence Matrix 基于Gabor小波、dct -神经网络、混合空间特征相互依赖矩阵的人脸图像识别
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926130
S. Fernandes, G. J. Bala
{"title":"Recognizing facial images using Gabor Wavelets, DCT-Neural Network, Hybrid Spatial Feature Interdependence Matrix","authors":"S. Fernandes, G. J. Bala","doi":"10.1109/ICDCSYST.2014.6926130","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926130","url":null,"abstract":"Recognizing faces from images acquired from distant cameras are still a challenging task because these images are usually corrupted by various noises and blurring effects. In this paper we have developed and analyzed Gabor Wavelets, Discrete Cosine Transform (DCT)-Neural Network and Hybrid Spatial Feature Interdependence Matrix (HSFIM) for face recognition in the presence of various noises and blurring effects. We simulate the real world scenario by adding noises: Gaussian noise, Salt and pepper noise and also adding blurring effects: Motion blur and Gaussian blur. To compare the performance of Gabor Wavelets, DCT-Neural Network, and HSFIM we have considered six standard public face databases: IITK, ATT, JAFEE, CALTECH, GRIMACE, and SHEFFIELD.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121868658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
QCA system design using blocks with vertically stacked active elements QCA系统设计采用块与垂直堆叠的有源元素
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926132
N. Kumari, K. Gurumurthy
{"title":"QCA system design using blocks with vertically stacked active elements","authors":"N. Kumari, K. Gurumurthy","doi":"10.1109/ICDCSYST.2014.6926132","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926132","url":null,"abstract":"Quantum Dot Cellular Automata is one among the various technologies proposed by the International Technology Roadmap for Semiconductors (ITRS) as a viable alternative to CMOS. Circuits designed in QCA are potentially better with respect to speed, power and area when compared to their counter parts in CMOS. But as the circuit complexity increases, there is a linear growth in the horizontal area leading to lengthier interconnects with increased delay. To circumvent this problem we propose a new design paradigm using vertically stacked QCA cells. As the active elements are placed right one above the other in this new approach, the number of cells used for the interconnection will be drastically reduced. Thus would result in very compact designs. This technique provides greater flexibility in routing due to the availability of both vertical and horizontal planes. Each majority gate which forms the basic element of a QCA circuit/Block is implemented in a different layer; hence it explores a new concept of reusability in QCA along with the reduction of time for determination of errors. In this paper we establish this idea with the design of adders, subtractors, ripple adders, ripple adder cum subtractors using vertically stacked QCA circuits. These circuits are implemented using the least number of cells and minimum clocking zones. Results obtained by simulation show a maximum reduction in the number of cells used for the overall design by 77% and the cells used for the interconnection by 90% in comparison to their primitive counterparts respectively.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117191868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effective binary to BCD converter using QuantumDot Cellular Automata 使用量子点元胞自动机的有效二进制到BCD转换器
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926118
A. Sasikala, S. Maragatharaj, S. Jayadevi
{"title":"Effective binary to BCD converter using QuantumDot Cellular Automata","authors":"A. Sasikala, S. Maragatharaj, S. Jayadevi","doi":"10.1109/ICDCSYST.2014.6926118","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926118","url":null,"abstract":"Quantum Dot Cellular Automata (QCA) is an emerging nanotechnology in the field of Quantum electronics for the low power consumption and high speed of operational phenomenon. Such type of circuit can be used in many digital applications where CMOS circuits cannot be used due to high leakage and low switching speed. The code converters are the basic units for conversion of data to perform arithmetic operations. A new effective binary to BCD converter design using QuantumDot Cellular Automata is presented in this paper. Compared to the available code converters in VLSI technology, this method of using Quantum dots reduces area and increases switching speed. 3-input Majority gate is the basic and universal gate in QCA design. In accordance with the code converter design using 3-input majority gate logic, a 5-input majority gate logic structure is also used here to design the binary to gray code converter. This replacement improves the speed of the system by reducing number of clock cycles required to produce the output.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123135328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Switching performance analyses of gate material and gate dielectric engineered TFET architectures and impact of interface oxide charges 栅极材料和栅极电介质工程TFET结构的开关性能分析及界面氧化物电荷的影响
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926182
Upasana, R. Narang, M. Saxena, Mridula Gupta
{"title":"Switching performance analyses of gate material and gate dielectric engineered TFET architectures and impact of interface oxide charges","authors":"Upasana, R. Narang, M. Saxena, Mridula Gupta","doi":"10.1109/ICDCSYST.2014.6926182","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926182","url":null,"abstract":"In this work performance investigation of three different Double Gate n-type TFET architectures i.e. Dual material Gate (DMG) TFET, Hetero-Dielectric (H-D) TFET and Dual Material Hetero-Dielectric (DMG H-D) TFET has been performed for Digital Circuit Applications. Moreover, a comparative study among these three aforementioned device architectures has been made in terms of performance metrics such as Total gate Capacitance (C<sub>gg</sub>), Miller capacitance (C<sub>gd</sub>), fall propagation delay (t<sub>pHL</sub>) and peak overshoot voltage (V<sub>p</sub>). In this regard, exhaustive simulations have been done through Atlas Device Simulator. Furthermore, the impact of metal gate (M1) work function and length L<sub>1</sub> variation over device switching characteristics has also been observed. Impact of Interface oxide charges (positive and negative) on the transient behavior, threshold voltage, I<sub>on</sub>, I<sub>off</sub>, I<sub>on</sub>/I<sub>off</sub> has also been studied for all three device architectures. It has been investigated that DMG H-D TFET which is the proposed architecture outperforms other devices i.e. DMG TFET and H-D TFET in terms of comparatively lower value of t<sub>pHL</sub>, V<sub>p</sub> and miller capacitance C<sub>gd</sub>.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117239878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Reduction of reflectance at c-silicon solar cell using nanotexturization 利用纳米化技术降低c-硅太阳能电池的反射率
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926171
S. Maity, A. Kundu, Sonali Das, P. Chakraborty
{"title":"Reduction of reflectance at c-silicon solar cell using nanotexturization","authors":"S. Maity, A. Kundu, Sonali Das, P. Chakraborty","doi":"10.1109/ICDCSYST.2014.6926171","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926171","url":null,"abstract":"Reduction in reflection losses of bare silicon surfaces has always attracted many researchers as it by far remains the most important criterion needed for achieving high efficiency solar cells. Anti-reflection coatings (ARC) of dielectrics help in balancing the refractive index mismatch between silicon and air. Although such ARCs help in reducing the reflection losses, they do not cause bending of light rays which is essential for efficient light trapping of the injected light into the cell. The technological leaps in the last few decades have lead to the possibility of nanotextured surfaces comprising of sub-wavelength structures in the optical domain. We report a simple and fast process for nanotexturing of the silicon surface may be achieved by creating silver nano-islands on the silicon surface and etching the exposed silicon surface.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121406528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simple nonautonomous Wien-bridge oscillator based chaotic circuit 基于简单非自治温桥振荡器的混沌电路
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926121
R. Rizwana, I. R. Mohamed, K. Srinivasan, M. Inbavalli
{"title":"Simple nonautonomous Wien-bridge oscillator based chaotic circuit","authors":"R. Rizwana, I. R. Mohamed, K. Srinivasan, M. Inbavalli","doi":"10.1109/ICDCSYST.2014.6926121","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926121","url":null,"abstract":"We propose a nonautonomous version of Wien-bridge oscillator with diode nonlinearity. It is a kind of simple circuit which exhibits chaotic behaviour. This oscillator circuit contains an operational amplifier, four resistors, two capacitors, a diode as a nonlinear element and external periodic force. This system exhibits various interesting dynamical phenomena like periodic, quasiperiodic and chaotic oscillations. The detailed analysis is carried out numerically by using two-parameter phase diagram in the forcing amplitude-frequency plane, one-parameter bifurcation diagram, Lyapunov exponents and phase portraits. Most of these numerical studies are in good agreement with observations from experiments.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122247403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Ultra-low power circuit design using double-gate FinFETs 采用双栅极finfet的超低功耗电路设计
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926194
G. Devi Tejashwini, I. B. K. Raju, G. Chary
{"title":"Ultra-low power circuit design using double-gate FinFETs","authors":"G. Devi Tejashwini, I. B. K. Raju, G. Chary","doi":"10.1109/ICDCSYST.2014.6926194","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926194","url":null,"abstract":"In this paper, the design and performance of basic Digital (AND, OR, NAND, NOR, XOR, XNOR, NOT, Half-Adder) and Analog (Current Mirror, Cascode Current Mirror, Comparator) circuits using 20nm FinFET technology has presented. 20nm FinFET technology has been used for improvement in performance and for optimizing power mainly in Analog circuits. In this work, for different widths of NMOS and PMOS and low voltages, better results of power performance is observed in both digital and analog circuits using FinFET technology.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127283914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Optical properties of samarium doped ZnO thin films 钐掺杂ZnO薄膜的光学性质
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926170
T. Rao, S. G. Raj, M. C. Santhosh Kumar
{"title":"Optical properties of samarium doped ZnO thin films","authors":"T. Rao, S. G. Raj, M. C. Santhosh Kumar","doi":"10.1109/ICDCSYST.2014.6926170","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926170","url":null,"abstract":"Samarium doped ZnO (Sm:ZnO) thin films were deposited onto glass substrates by spray pyrolysis. The Sm:ZnO thin films were annealed in various atmosphere such as air (ambient), oxygen and nitrogen. A number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, UV-visible and photoluminescence (PL) were used to characterize the obtained Sm:ZnO thin films. Raman spectroscopy and XRD studies were conform wurzite structure of Sm:ZnO thin films. PL studies shown that the broad emission spectra, which includes UV to green-yellow (visible) region.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"300 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131428036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Coiflets, artificial neural networks and predictive coding based hybrid image compression methodology 基于coiflet、人工神经网络和预测编码的混合图像压缩方法
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926208
S. Sridhar, P. R. Kumar, K. Ramanaiah, D. Nataraj
{"title":"Coiflets, artificial neural networks and predictive coding based hybrid image compression methodology","authors":"S. Sridhar, P. R. Kumar, K. Ramanaiah, D. Nataraj","doi":"10.1109/ICDCSYST.2014.6926208","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926208","url":null,"abstract":"Hybrid image compression system is discussed and analyzed for better objective fidelity metrics combining the advantages of Coiflet filter functions of wavelets, Predictive Coding (Differential Pulse Code Modulation-DPCM) and neural networks in addition to quantization and Huffman encoding techniques to eliminate the interpixel, psychovisual redundancy and coding redundancy. Artificial neural networks are self adaptive i.e. they can adjust themselves to data without any specification of the functional model they are fault tolerant by architecture. Wavelets (by choice) on the other hand are computationally simple and provide good compression ratios for high resolution images especially while DPCM removes redundancy in the information. Initially selected wavelet of choice (Coiflet5 in this case) is applied on the input image for two level decomposition generating seven bands of low frequency and high frequency coefficients. The low frequency band 1 coefficients are compressed with DPCM technique while the remaining bands of coefficients are compressed with artificial neural networks. Metrics obtained: Peak Signal to Noise Ratio (PSNR) Mean Square Error (MSE) and Compression Ratio (CR) are tabulated for comparative analysis.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123853224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low hardware overhead implementation of 3-weight pattern generation technique for VLSI testing VLSI测试中三权重模式生成技术的低硬件开销实现
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926180
D. Gracia Nirmala Rani, M. G. Mangala Meenakshi, S. Marina
{"title":"Low hardware overhead implementation of 3-weight pattern generation technique for VLSI testing","authors":"D. Gracia Nirmala Rani, M. G. Mangala Meenakshi, S. Marina","doi":"10.1109/ICDCSYST.2014.6926180","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926180","url":null,"abstract":"Pseudorandom Built-In Self-Test (BIST) generators have been most frequently used to test the integrated circuits and systems. This scheme requires more test patterns and consumes more testing time hence weighted pseudorandom BIST schemes have been proposed. These methodologies are used to drive down the number of test vectors. Most of the current VLSI chips have accumulators; hence they can be utilized efficiently to reduce the hardware of BIST pattern generation. Therefore in this paper a low hardware overhead implementation of 3-weight pattern generation technique is proposed to achieve high fault coverage and reduced testing time. The proposed scheme generates set of patterns for ISCAS c17 benchmark circuits with weights 0, 0.5, and 1.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124282173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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