2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)最新文献_第3页

Current-voltage characteristics CNTFET considering non-ballistic conduction: Effect of gate oxide thickness 考虑非弹道导通的CNTFET电流-电压特性:栅极氧化物厚度的影响

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926195

N. T. Rouf, Ashfaqul Haq Deep, Rusafa Binte Hassan, S. Khan, M. Hasan, S. M. Mominuzzaman

{"title":"Current-voltage characteristics CNTFET considering non-ballistic conduction: Effect of gate oxide thickness","authors":"N. T. Rouf, Ashfaqul Haq Deep, Rusafa Binte Hassan, S. Khan, M. Hasan, S. M. Mominuzzaman","doi":"10.1109/ICDCSYST.2014.6926195","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926195","url":null,"abstract":"Carbon nanotube is being considered as a prospective alternative for the existing Silicon technology in present days. The advancement of Silicon technology, at present, has slowed down considerably because of its various material issues and scaling limitations and so, carbon nanotubes have gained the attention of researchers around the world over. In this literature, the effect of gate oxide thickness on the performance of carbon nanotube field effect transistor (CNTFET) with non-ballistic conduction is extensively investigated. It is found in this study that with the increase of the gate oxide thickness, the current output of CNTFET considering non-ballistic conduction deteriorates by a significant amount. In addition to this, the results obtained from this experiment are compared with previously reported CNTFET with ballistic conduction data for a better perception of the non-ballistic conduction effects. Also, the on and off state current ratios have been calculated and plotted in this work to further contrast the ballistic and non-ballistic conduction of CNTFET.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126358327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Zigbee-based intelligent street lighting system 基于zigbee的智能街道照明系统

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926165

Sagar Deo, S. Prakash, Asha B Patil

引用次数: 23

Intelligent control technique for MPPT of PV system 光伏系统MPPT智能控制技术

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926164

K. Divya, G. Sugumaran

引用次数: 5

Speech compression using tree structured Vector Quantization 使用树结构矢量量化的语音压缩

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926143

M. V. Makwana, A. B. Nandurbarkar, K. R. Parmar

引用次数: 1

RF performance analysis and small signal parameter extraction of Cylindrical Surrounding Double Gate MOSFETs for sub-millimeter wave applications 用于亚毫米波的圆柱形环绕双栅mosfet射频性能分析及小信号参数提取

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926176

Jay Hind K. Verma, Yogesh Pratap, Mridula Gupta, S. Haldar, R. Gupta

引用次数: 2

Error recognition and correction enhanced decoding of hybrid codes for memory application 错误识别和纠错增强了存储器中混合码的译码

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926127

S. Baskar

引用次数: 19

A high stability and excellent gain flatness 3–5 GHz 0.18μm CMOS low noise amplifier for ultra-wide-band applications 3-5 GHz 0.18μm CMOS低噪声放大器，适用于超宽带应用

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926201

V. Bhale, U. Dalal, R. Patrikar

{"title":"A high stability and excellent gain flatness 3–5 GHz 0.18μm CMOS low noise amplifier for ultra-wide-band applications","authors":"V. Bhale, U. Dalal, R. Patrikar","doi":"10.1109/ICDCSYST.2014.6926201","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926201","url":null,"abstract":"A two-stage Ultra-Wide-Band (UWB) CMOS low noise amplifier (LNA) employing RC feedback on conventional cascode inductive source degeneration structure is presented in this paper. The proposed LNA is designed using 0.18 μm radio frequency (RF) CMOS technology for a 3 to 5 GHz ultra-wide-band system. By careful optimization, an RC feedback circuit acts as a current reused topology, while second stage used is a simple common source topology to improve gain and its flatness for 3 to 5 GHz band. The designed single stage LNA has a power gain of 12.7 dB, input return loss of <; -6 dB, output return loss of <; -8 dB, reverse isolation of <; -26.8 dB, noise figure of 2.31 dB and one dB compression (P1dB) of -6.46719 dBm at 4 GHz, while consuming 11.7 mW of DC dissipation at a 1.8 V supply voltage. The another topology uses a common source (CS) as second stage to boost the gain up to 22 dB, thereby maintaining gain flatness over 3-5 GHz band and an improved isolation of <; -40 dB is achieved. The output and input return losses are <; -10 dB respectively for desired band with the compromise of power consumption of 12.5 mW. The stability analysis also shows that the designed LNA is un-conditionally stable and found to maintain good linearity.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128712483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A self-consistent model for hetero-gate all around tunnel FET 全隧道场效应管异质栅自洽模型

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926147

B. Bhowmick, K. Jena, S. Baishya

引用次数: 0

Hepatic tumor detection in ultrasound images 肝脏肿瘤的超声图像检测

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926196

B. Shajahan, S. Sudha

{"title":"Hepatic tumor detection in ultrasound images","authors":"B. Shajahan, S. Sudha","doi":"10.1109/ICDCSYST.2014.6926196","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926196","url":null,"abstract":"Hepatic tumors are tumors that grows on or in the liver. They are classified into benign and malignant tumors. Hepatocellular carcinoma is the most frequent malignant tumor in the liver. Ultrasound is the first line investigation carried out by the physician for any abnormalities in the liver. The only golden standard for detection of liver tumor is needle biopsy, but it is invasive and causes secondary infection and bleeding at that site. In this work we present a non invasive method for detection of hepatic tumors based on ultrasound images and classification is done to differentiate the tumors in the liver. The proposed method consist of three stages namely segmentation, feature extraction and classification. In the first stage the ultrasound image containing the tumor is segmented using Fuzzy C means clustering algorithm. In the second stage gray level co-occurrence matrix features are extracted from the segmented image and Haralick texture features are extracted. In the third stage consist of training the extracted features using SVM and classification is done for normal and abnormal image. The Fuzzy C means clustering combined with SVM outperforms the other classifiers with a sensitivity of 98%.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128150612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Design of dual director short back fire antenna for UWB applicatios 用于超宽带应用的双定向短背火天线设计

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI: 10.1109/ICDCSYST.2014.6926126

Anjaneyulu Badugu, N. Ananda Rao, T. V. Rama Krishna, K. Vijaya Vardan, K. Satish

引用次数: 0