A self-consistent model for hetero-gate all around tunnel FET

Abstract

This paper proposes a new self-consistent model for 3D tunnel FET with all around hetero-gate oxide. Device structure has been optimized for channel length and source doping. Schrödinger-Poisson self-consistent method is used to develop a new three dimensional (3D) Schrödinger's equation model using separation of variable technique and a 2D potential function. Model results are validated using TCAD simulation data.