全隧道场效应管异质栅自洽模型

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI:10.1109/ICDCSYST.2014.6926147

B. Bhowmick, K. Jena, S. Baishya

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引用次数: 0

摘要

本文提出了一种新的全绕异质栅极氧化物三维隧道场效应管自一致模型。器件结构针对通道长度和源掺杂进行了优化。采用Schrödinger-Poisson自洽法，利用分离变量技术和二维势函数建立了一个新的三维Schrödinger方程模型。利用TCAD仿真数据对模型结果进行了验证。

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A self-consistent model for hetero-gate all around tunnel FET

This paper proposes a new self-consistent model for 3D tunnel FET with all around hetero-gate oxide. Device structure has been optimized for channel length and source doping. Schrödinger-Poisson self-consistent method is used to develop a new three dimensional (3D) Schrödinger's equation model using separation of variable technique and a 2D potential function. Model results are validated using TCAD simulation data.

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2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)

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