Jay Hind K. Verma, Yogesh Pratap, Mridula Gupta, S. Haldar, R. Gupta
{"title":"用于亚毫米波的圆柱形环绕双栅mosfet射频性能分析及小信号参数提取","authors":"Jay Hind K. Verma, Yogesh Pratap, Mridula Gupta, S. Haldar, R. Gupta","doi":"10.1109/ICDCSYST.2014.6926176","DOIUrl":null,"url":null,"abstract":"This paper investigates the radio frequency (RF) performance for Cylindrical Surrounding Double Gate (CSDG) MOSFETs using 3-D Device simulator. CSDG MOSFETs are evaluated for various RF parameters such as cutoff frequency FT, current gain, maximum power transducer gain, unilateral power gain in comparison to cylindrical surrounding gate (CSG) MOSFETs. To examine the insertion loss and leakage factor of the devices, the reflection coefficients (S11, S22) and transmission coefficients (S12, S21) are evaluated with respect to frequency. The impact of temperature variation on the performance of new device and its counterpart has also been studied in details. Results demonstrate that due to transcendent gate controllability over the channel region, the new device exhibits a remarkable cutoff frequency in THz range, higher ION current and higher gains.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"RF performance analysis and small signal parameter extraction of Cylindrical Surrounding Double Gate MOSFETs for sub-millimeter wave applications\",\"authors\":\"Jay Hind K. Verma, Yogesh Pratap, Mridula Gupta, S. Haldar, R. Gupta\",\"doi\":\"10.1109/ICDCSYST.2014.6926176\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates the radio frequency (RF) performance for Cylindrical Surrounding Double Gate (CSDG) MOSFETs using 3-D Device simulator. CSDG MOSFETs are evaluated for various RF parameters such as cutoff frequency FT, current gain, maximum power transducer gain, unilateral power gain in comparison to cylindrical surrounding gate (CSG) MOSFETs. To examine the insertion loss and leakage factor of the devices, the reflection coefficients (S11, S22) and transmission coefficients (S12, S21) are evaluated with respect to frequency. The impact of temperature variation on the performance of new device and its counterpart has also been studied in details. Results demonstrate that due to transcendent gate controllability over the channel region, the new device exhibits a remarkable cutoff frequency in THz range, higher ION current and higher gains.\",\"PeriodicalId\":252016,\"journal\":{\"name\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDCSYST.2014.6926176\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2014.6926176","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RF performance analysis and small signal parameter extraction of Cylindrical Surrounding Double Gate MOSFETs for sub-millimeter wave applications
This paper investigates the radio frequency (RF) performance for Cylindrical Surrounding Double Gate (CSDG) MOSFETs using 3-D Device simulator. CSDG MOSFETs are evaluated for various RF parameters such as cutoff frequency FT, current gain, maximum power transducer gain, unilateral power gain in comparison to cylindrical surrounding gate (CSG) MOSFETs. To examine the insertion loss and leakage factor of the devices, the reflection coefficients (S11, S22) and transmission coefficients (S12, S21) are evaluated with respect to frequency. The impact of temperature variation on the performance of new device and its counterpart has also been studied in details. Results demonstrate that due to transcendent gate controllability over the channel region, the new device exhibits a remarkable cutoff frequency in THz range, higher ION current and higher gains.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
