Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces最新文献

Adhesive and conductive adhesive flip chip bonding 胶粘剂和导电胶粘剂倒装芯片粘接

Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces Pub Date : 1997-03-09 DOI: 10.1109/ISAPM.1997.581272

R. Zenner, G. Connell, J. Gerber

{"title":"Adhesive and conductive adhesive flip chip bonding","authors":"R. Zenner, G. Connell, J. Gerber","doi":"10.1109/ISAPM.1997.581272","DOIUrl":"https://doi.org/10.1109/ISAPM.1997.581272","url":null,"abstract":"Over the past decade the use of adhesives for electronic interconnect has been driven by the explosive growth of flat panel liquid crystal displays (LCD). Developed and used primarily by Japanese manufacturers of consumer products, particle-loaded adhesive films fulfilled a need in LCDs that could not be met by solder reflow: low temperature, high line density (to 50 /spl mu/m pitch) electrical interconnect to indium tin oxide (ITO) traces on glass. Adhesives may also be used for flip-chip assembly. The advantages of flip-chip attach technology are the same for solder or adhesive technology: footprint reduction, low interconnect resistance, short signal line length, and elimination of single-chip packaging costs. Lower parasitics decrease rise times and decrease power requirements. To prevent differential thermal expansion induced solder fatigue, flip-chip attachment using solder reflow requires the use of an underfill adhesive applied in a separate time-consuming process. Adhesive films described in this paper inherently provide an underfill, serve as environmental protection for the chip face, as well as make a solderless electrical connection. Performance results for fine pitch chips have shown stable interconnect resistance below 10 m/spl Omega/ for bumped chip applications and approximately 100 m/spl Omega/ with unbumped chip test vehicles. The adhesive flip-chip bonding process and environmental stress results will be presented in this paper.","PeriodicalId":248825,"journal":{"name":"Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124523873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Materials mechanics and mechanical reliability of flip chip assemblies on organic substrates 有机基板上倒装芯片组件的材料力学和机械可靠性

Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces Pub Date : 1997-03-09 DOI: 10.1109/ISAPM.1997.581268

A. Schubert, R. Dudek, B. Michel, H. Reichl, H. Jiang

{"title":"Materials mechanics and mechanical reliability of flip chip assemblies on organic substrates","authors":"A. Schubert, R. Dudek, B. Michel, H. Reichl, H. Jiang","doi":"10.1109/ISAPM.1997.581268","DOIUrl":"https://doi.org/10.1109/ISAPM.1997.581268","url":null,"abstract":"This paper demonstrates a combined approach of numerical analysis and experimental investigations to study the mechanical reliability of flip chip solder joints. The effect of various design parameters like bump geometry, \"soft\" and \"hard\" underfill, and used solder mask on the thermal fatigue life of solder joints is discussed. Since special attention has been directed towards Flip Chip on Board (FCOB) assemblies, constitutive properties of polymeric and solder materials are discussed in detail. The solder is modeled using a nonlinear constitutive law with time dependent (creep) and time independent plastic strains. Furthermore, material testing shows that the underfill and solder mask materials might be considered as linear viscoelastic with temperature time shift properties. Thermal mismatch between the materials assembled is often the main reason for thermally induced stresses. Thermal cycling (125/spl deg/C...-55/spl deg/C...125/spl deg/C) is therefore the load generally used in the 3D non-linear finite element analysis. Calculation results of the solder bump deformation due to temperature changes are accompanied by experimental deformation analysis. The used MicroDAC method is based on algorithms of local object tracking in images obtained from electron scanning microscopy. The measured deformation fields were utilized for proper materials selection and processing, as well as for verification of finite element analysis.","PeriodicalId":248825,"journal":{"name":"Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125590722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 33

Plastic packaging modeling and characterization at RF/microwave frequencies 射频/微波频率下的塑料包装建模和表征

Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces Pub Date : 1997-03-09 DOI: 10.1109/ISAPM.1997.581280

S.M. Raid, W. Su, I. Salama, A. Elshabini-Riad, M. Rachlin, W. Baker, J. Perdue

引用次数: 4

Thin film resistors and capacitors for advanced packaging 用于高级封装的薄膜电阻器和电容器

Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces Pub Date : 1997-03-09 DOI: 10.1109/ISAPM.1997.581260

R. Kola, M. Lau, S. Dueñas, H. Kumagai, P.R. Smith, R. Frye, K. Tai, P. Sullivan

{"title":"Thin film resistors and capacitors for advanced packaging","authors":"R. Kola, M. Lau, S. Dueñas, H. Kumagai, P.R. Smith, R. Frye, K. Tai, P. Sullivan","doi":"10.1109/ISAPM.1997.581260","DOIUrl":"https://doi.org/10.1109/ISAPM.1997.581260","url":null,"abstract":"Integrated passive components are important for high frequency hybrid microelectronics. We have fabricated resistors using reactively sputtered TaN/sub x/ (x<0.5) and Ta/sub 2/Si thin films. We report on the resistivity, temperature coefficient of resistance (TCR), microstructure, composition, and thermal stability as a function of deposition conditions. The resistivity can be tuned, for example, by varying the nitrogen concentration. We have also fabricated capacitors with high capacitance density (70 nF/cm/sup 2/) using Ta/sub 2/O/sub 5/ dielectric films. The Ta/sub 2/O/sub 5/ dielectric films were prepared by various methods such as reactively sputtered Ta/sub 2/O/sub 5/, anodization of reactively sputtered TaN,, and anodization of Ta,Si films. We report on the capacitance density, leakage current, breakdown voltage, and dissipation factor up to high frequencies. We also report on the temperature coefficient of capacitance (TCC) and thermal stability of these capacitors during subsequent processing. A variety of analytical techniques were used to characterize the film properties. These anodic Ta/sub 2/O/sub 5/ capacitors have exceptionally low leakage currents (<1 nA/cm/sup 2/ at 10 V), high breakdown fields (>4 MV/rm), and high capacitance densities (70 nF/cm/sup 2/). The ac measurements of the capacitors showed ideal behavior up to 10 MHz Generally, anodic capacitors degrade upon subsequent processing above 200/spl deg/C due to dielectric and electrode metal interaction. By engineering the dielectric and the electrode materials, we have fabricated anodic Ta/sub 2/O/sub 5/ capacitors that are stable up to 350/spl deg/C with excellent capacitor properties. These capacitors are useful as integrated passive components for advanced packaging applications.","PeriodicalId":248825,"journal":{"name":"Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130142044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Thin film passive components integrated into silicon based multi-chip modules for aerospace applications 薄膜无源元件集成到基于硅的多芯片模块，用于航空航天应用

Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces Pub Date : 1997-03-09 DOI: 10.1109/ISAPM.1997.581262

N. Kim, K. Coates, C. Chien, M. Tanielian

引用次数: 3

Al/SiC for power electronics packaging 用于电力电子封装的Al/SiC

Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces Pub Date : 1997-03-09 DOI: 10.1109/ISAPM.1997.581284

M. K. Premkumar

引用次数: 3

Development of low loop, long length, hydrostatically extruded bonding wire 开发低回路、长长度、流体静压挤压焊线

Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces Pub Date : 1997-03-09 DOI: 10.1109/ISAPM.1997.581273

H. Lichtenberger, Gabriel Toea, Michael Zasowski

引用次数: 1

Flex on cap-solder paste bumping 挠曲盖-焊膏碰撞

Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces Pub Date : 1997-03-09 DOI: 10.1109/ISAPM.1997.581271

P. Elenius

引用次数: 9

Cost/performance analysis for plastic package "ruggedization" and thermal enhancement 塑料封装“加固”和热增强的成本/性能分析

Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces Pub Date : 1997-03-09 DOI: 10.1109/ISAPM.1997.581264

L. Nguyen, D. Tracy, A. Chen, R. Giberti, J. Hatch, J. DeRosa, B. Werner

{"title":"Cost/performance analysis for plastic package \"ruggedization\" and thermal enhancement","authors":"L. Nguyen, D. Tracy, A. Chen, R. Giberti, J. Hatch, J. DeRosa, B. Werner","doi":"10.1109/ISAPM.1997.581264","DOIUrl":"https://doi.org/10.1109/ISAPM.1997.581264","url":null,"abstract":"The Plastic Packaging Consortium (PPC), a Technology Reinvestment Project (TRP) funded by DARPA under SOL 94-27 addresses the needs required to build up and strengthen an on-shore infrastructure for \"ruggedized\", thermally enhanced and high density low-cost plastic packages. The PPC is now in the second year of a two-year program. A number of technical advances has been made in various areas related to the materials of construction of the packages. However, such advances typically come at higher costs. The intention of the Program is to identify the various combinations of such advances so that the total cost of ownership would be reduced even though individual elements of the package may incur higher costs. This talk will discuss the cost/performance analysis for two arms under evaluation by the PPC, namely, package \"ruggedization\" and package \"thermal enhancement.\" \"Ruggedization\" refers to the strengthening of the plastic package to withstand the rigor of surface mounting without the need for dry bagging and baking the parts to avoid popcorning. \"Thermal enhancement\" refers to the need for higher heat dissipation without resorting to external heat sinks. SEMATECH's Cost Resources Model (CRM) was used to analyze the process flows involved for these two Focus Areas. The cost of ownership for the various combinations of package enhancement will be discussed with respect to the performance level achieved. IBIS Associates's Technical Cost Model (TCM) was applied for the flow of handling moisture sensitive devices at the board assembly level.","PeriodicalId":248825,"journal":{"name":"Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130410812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

New material technology for high density interconnections 高密度互连新材料技术

Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces Pub Date : 1997-03-09 DOI: 10.1109/ISAPM.1997.581247

D.D. Johnson

引用次数: 2