发布求助
文献互助 智能选刊 最新文献

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

筛选
英文 中文
Improving the efficiency of white OLEDs based on a gradient refractive index substrate 基于梯度折射率衬底的白光oled效率的提高
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173200
Chih‐Hao Chang, Tzu-Fang Chang, Yu-Jhong Lo, Yi-Hua Liang, Yingpeng Wu, Hsin-hua Chang
{"title":"Improving the efficiency of white OLEDs based on a gradient refractive index substrate","authors":"Chih‐Hao Chang, Tzu-Fang Chang, Yu-Jhong Lo, Yi-Hua Liang, Yingpeng Wu, Hsin-hua Chang","doi":"10.1109/AM-FPD.2015.7173200","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173200","url":null,"abstract":"For use in lighting applications, white organic light-emitting devices (WOLEDs) must operate at higher biases to ensure an ample flux. However, stressed operation voltages often result in poor performance and limited device lifetime. This could be addressed by modifying the inherent optical properties of OLEDs. This study proposes a gradient refractive index (GRIN) substrate to adjust the ratio of the light-waveguided modes as well as the radiation mode. An embedded nanocomposite film consisting of titanium dioxide (TiO2) nanoparticles (NPs) was inserted between ITO and glass to create an internal light-extraction structure (IES). The high refractive index of TiO2 is essential for increasing the refractive index of the photoresist film and thus diminishing the total internal reflection between the interfaces. In addition, the silicon dioxide NPs mixed polydimethylsiloxane was used to form an external light-extraction structure (EES). The refractive indices of the IES and EES were adjusted to form a GRIN substrate. Compared with a control device, this sophisticated substrate produced a 1.6 fold efficiency improvement.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125607933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Prospects of oxide TFTs approaching LTPS 氧化物tft接近LTPS的前景
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173254
K. Park, Saeroonter Oh, P. Yun, J. Bae, I. Kang
{"title":"Prospects of oxide TFTs approaching LTPS","authors":"K. Park, Saeroonter Oh, P. Yun, J. Bae, I. Kang","doi":"10.1109/AM-FPD.2015.7173254","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173254","url":null,"abstract":"Oxide TFTs are becoming the mainstream backplane technology for high-resolution large screen displays, while LTPS TFTs are mostly used for high-end portable smart devices. Recent developments in oxide TFTs show high mobility exceeding 50 cm2/V·s, good stability characteristics comparable to LTPS, and integration on plastic substrates for a large range of flexible applications. With these technological advances, oxide TFTs can become a universal backplane solution for LCD and OLED displays.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121404939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Using carbazole-triazole derives host in blue phosphorescent OLEDs 利用卡巴唑-三唑衍生出蓝色磷光oled中的宿主
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173203
Yu-Hsiang Hung, Tien‐Lung Chiu
{"title":"Using carbazole-triazole derives host in blue phosphorescent OLEDs","authors":"Yu-Hsiang Hung, Tien‐Lung Chiu","doi":"10.1109/AM-FPD.2015.7173203","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173203","url":null,"abstract":"We fabricated an efficient blue phosphorescent organic light emitting diode (OLED) using our new carbazole-triazole derives (CbzTAZ) host. This CbzTAZ was chemically combine a hole-transporting carbazole moiety and an electron-transporting triazole moiety to be the bipolar behavior. Two OLEDs with carbazole-based mCP host and triazole-based TAZ were fabricated to be the reference. In Comparison with the electroluminance performance of these two devices, the OLED with CbzTAZ host perform a more efficient electroluminance performance, such as a current efficiency of 46.06 cd/A, a power efficiency of 39.8 lm/W and an external quantum efficiency of 21.78 %.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116285393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Flexible displays using c-axis-aligned-crystal oxide semiconductors 使用c轴对齐晶体氧化物半导体的柔性显示器
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173244
J. Koezuka, K. Okazaki, Satoru Idojiri, Y. Shima, Kei Takahashi, Daiki Nakamura, S. Yamazaki
{"title":"Flexible displays using c-axis-aligned-crystal oxide semiconductors","authors":"J. Koezuka, K. Okazaki, Satoru Idojiri, Y. Shima, Kei Takahashi, Daiki Nakamura, S. Yamazaki","doi":"10.1109/AM-FPD.2015.7173244","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173244","url":null,"abstract":"We developed a c-axis-aligned-crystal In-Ga-Zn oxide (CAAC-IGZO) with a new composition that achieved higher field-effect mobility than a conventional CAAC-IGZO FET. The use of the new CAAC-IGZO for an active layer results in a channel-etched field-effect transistor (FET) with high mobility, normally-off characteristics, and high reliability. We fabricated a 13.3-inch 8K 664-ppi foldable organic light-emitting diode (OLED) display panel and the world's largest 81-inch 8K OLED kawara-type multi-display comprising white top-emission OLEDs with color filters employing the high-mobility CAAC-IGZO FETs in the backplane and using a transfer technology based on an inorganic separation layer.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125813631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All-optically controllable scattering mode light modulator based on azobenzene liquid crystals and poly(N-vinylcarbazole) films 基于偶氮苯液晶和聚n -乙烯基咔唑薄膜的全光可控散射模式光调制器
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173199
Yen‐Chen Liu, Ko-Ting Cheng, Yuan-Di Chen, A. Fuh
{"title":"All-optically controllable scattering mode light modulator based on azobenzene liquid crystals and poly(N-vinylcarbazole) films","authors":"Yen‐Chen Liu, Ko-Ting Cheng, Yuan-Di Chen, A. Fuh","doi":"10.1109/AM-FPD.2015.7173199","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173199","url":null,"abstract":"The study reports that isothermal phase transition and induced by photoisomerization of azobenzene liquid crystals (azo-LCs) from trans- to cis-isomers results in the dissolution of poly(N-vinylcarbazole) (PVK) into azo-LCs. All-optically controllable and highly efficient scattering mode light modulators based on PVK films and it's re-form mechanism were demonstrated.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126007193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron-transporting layer effects on blue phosphorescent organic light-emitting diodes 蓝色磷光有机发光二极管的电子传输层效应
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173202
Tzu-Chan Lin, Tien‐Lung Chiu
{"title":"Electron-transporting layer effects on blue phosphorescent organic light-emitting diodes","authors":"Tzu-Chan Lin, Tien‐Lung Chiu","doi":"10.1109/AM-FPD.2015.7173202","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173202","url":null,"abstract":"In this work, we demonstrated the electron-transporting layer (ETL) effects on device electroluminescence (EL) performance of blue phosphorescent organic light-emitting diodes (PhOLED). Three well known electron-transporting materials such as 3-(4-biphenyl-yl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ), diphenyl-bis[4-(pyridin-3-yl)phenyl]silane (DPPS) and 1,3,5-tri( m-pyrid-3-yl-phenyl)benzene (TmPyPB) were employed as ETL inside a blue PhOLED. The material properties of these three ETL materials individually dominated the different location of carrier recombination and exciton formation inside device, especially carrier mobility. By investigating the EL performance of these three devices, one can be concluded that high carrier mobility ETL results to a low driving voltage, worse carrier confinement in the emitting layer, greater amount of leakage electrons. The great efficiency performance is dominated by the great carrier confinement in the emitting layer.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"89 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126115233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature processes for metal-oxide thin film transistors 金属氧化物薄膜晶体管的低温工艺
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173191
N. Fruehauf, M. Herrmann, H. Baur, M. Aman
{"title":"Low temperature processes for metal-oxide thin film transistors","authors":"N. Fruehauf, M. Herrmann, H. Baur, M. Aman","doi":"10.1109/AM-FPD.2015.7173191","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173191","url":null,"abstract":"Processes for realizing ohmic drain/source contacts and a multilayer dielectric for sputtered amorphous oxide thin film transistors with high throughput at 160°C combined with a back-channel etch process have been demonstrated. These transistors achieve a carrier mobility of 8.6 cm2/Vs, a subthreshold slope of 0.18 V/dec, threshold voltage of 2.54 V and on/off ratio above 107. The chosen backchannel etch approach can also be extended to be used with drain/source metals such as molybdenum or copper.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127304365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fully-transparent Mo-doped ZnO TFTs fabricated in different oxygen partial pressure at low temperature 低温下不同氧分压下制备的全透明mo掺杂ZnO tft
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173212
P. Shi, Dedong Han, Yi Zhang, Wen Yu, Lingling Huang, Y. Cong, Xiaoliang Zhou, Zhuofa Chen, Junchen Dong, Shengdong Zhang, Xing Zhang, Yi Wang
{"title":"Fully-transparent Mo-doped ZnO TFTs fabricated in different oxygen partial pressure at low temperature","authors":"P. Shi, Dedong Han, Yi Zhang, Wen Yu, Lingling Huang, Y. Cong, Xiaoliang Zhou, Zhuofa Chen, Junchen Dong, Shengdong Zhang, Xing Zhang, Yi Wang","doi":"10.1109/AM-FPD.2015.7173212","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173212","url":null,"abstract":"Fully-transparent Mo-doped ZnO (MZO) thin film transistors (TFTs) have been successfully fabricated on glass substrate by radio frequency Magnetron Sputtering at room temperature and its characteristics have been studied in different oxygen partial pressure. The results show that the MZO TFTs which were deposited at low oxygen partial pressure (10%) have excellent performance such as subthreshold swing of 388 mV/decade, the saturation mobility of 5.8 cm2/V·s, the threshold voltage of 3.97 V, the Ioff value of 5×10-12 A, and the on/off current ratio of 2.4×107. To identify properties of the film formed at oxygen partial pressure of 10%, X-ray diffraction, scan electron microscopy, and transmittance were used to investigate the microstructure of the films. All conclusions suggest that MZO TFTs will become a promising candidate for TFT-LCD.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114695499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A study on corbino a-IGZO TFTs with different bending curvatures for flexible electronics 柔性电子用不同弯曲曲率复合A - igzo tft的研究
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173214
Wan-Chen Huang, Shuo Sun, Chun-Cheng Cheng, Chu-Yu Liu, M. Chiang
{"title":"A study on corbino a-IGZO TFTs with different bending curvatures for flexible electronics","authors":"Wan-Chen Huang, Shuo Sun, Chun-Cheng Cheng, Chu-Yu Liu, M. Chiang","doi":"10.1109/AM-FPD.2015.7173214","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173214","url":null,"abstract":"The Island-Stop a-IGZO Thin Film Transistors (TFTs) with the corbino architecture were demonstrated on plastic substrates. The highest annealed temperature of the process was controlled at 220 °C. The electrical characteristics of corbino a-IGZO TFTs were measured under the compressive strain down to the bending radius of 10 mm. And two kinds of bending directions including parallel and perpendicular to the channel were performed. Finally, the influences of mechanical strains on the threshold voltage and the negative bias stress (NBS) of these devices were recorded.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114416624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Annihilation properties of photo-induced carrier in silicon pn junction 硅pn结中光致载流子的湮灭特性
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173239
M. Hasumi, T. Sameshima, Takayuki Motoki, Tomohiko Nakamura, T. Mizuno
{"title":"Annihilation properties of photo-induced carrier in silicon pn junction","authors":"M. Hasumi, T. Sameshima, Takayuki Motoki, Tomohiko Nakamura, T. Mizuno","doi":"10.1109/AM-FPD.2015.7173239","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173239","url":null,"abstract":"We report analysis of the photo-induced minority carrier effective lifetime (τ<sub>eff</sub>) in p<sup>+</sup>n junction formed on the top surfaces of n-type silicon substrates by ion implantation of boron and phosphorus atoms at top and bottom surfaces followed by activation by microwave heating. The values of τ<sub>eff</sub> were lower than 1×10<sup>-5</sup> s in the reverse bias condition when continuous wave 635 nm light was illuminated at 0.74 mW/cm<sup>2</sup> to the p<sup>+</sup> surface. On the other hand, τ<sub>eff</sub> markedly increased to 1.4×10<sup>-4</sup> s as the forward bias voltage increased to 0.7 V and then it leveled off above 0.7 V. Numerical analysis indicated that the carrier annihilation velocity at the p<sup>+</sup> surface region was strongly depended on the bias voltage.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128241574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信