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2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

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Hydrothermal synthesis of Eu3+-doped NaYF4 downconversion materials for silicon-based solar cells applications 水热合成Eu3+掺杂NaYF4硅基太阳能电池下转换材料
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173238
Chien-Wei Liu, Chin-Lung Cheng, Jung-Yen Yang
{"title":"Hydrothermal synthesis of Eu3+-doped NaYF4 downconversion materials for silicon-based solar cells applications","authors":"Chien-Wei Liu, Chin-Lung Cheng, Jung-Yen Yang","doi":"10.1109/AM-FPD.2015.7173238","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173238","url":null,"abstract":"A Eu<sup>3+</sup>-doped NaYF<sub>4</sub> downconversion materials (DCM) spin-cast on the front surface of the silicon-based solar cells (SBSCs) has been fabricated to improve the photovoltaic characteristics of SBSCs. Organic solvent dispersible Eu<sup>3+</sup>-doped NaYF<sub>4</sub> DCMs were hydrothermally synthesized according to the modified liquid-solid-solution synthetic strategy. Intense and well-resolved photoluminescent lines in the range of 580-700 nm are observed from the Eu<sup>3+</sup>-doped NaYF<sub>4</sub> DCM. The achievement of an CE improvement of more than 0.6% absolute from 15.5% to 16.1% in SBSCs with Eu<sup>3+</sup>-doped NaYF<sub>4</sub> DCM was explored.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126660567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Various approaches for high performance and stable oxide thin-film transistors 制备高性能稳定氧化物薄膜晶体管的各种方法
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173187
Yeong-gyu Kim, J. Na, Won-Gi Kim, Hyun Jae Kim
{"title":"Various approaches for high performance and stable oxide thin-film transistors","authors":"Yeong-gyu Kim, J. Na, Won-Gi Kim, Hyun Jae Kim","doi":"10.1109/AM-FPD.2015.7173187","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173187","url":null,"abstract":"We investigated various approaches to enhance the electrical performance and stability of oxide thin-film transistors (TFTs) fabricated with vacuum- and solution-process: vertically graded oxygen vacancy active layer (VGA) by control of oxygen partial pressure, sequential pressure annealing (SPA), and hydrogen peroxide activation (HPA) using ultraviolet irradiation. By adopting these techniques, we could effectively control the defect densities in active layer which resulted in high performance and stable oxide TFTs.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131725753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement in performance of solution processed indium-zinc-tin oxide thin film transistors by using UV Ozone treatment on zirconium oxide gate insulator 紫外臭氧处理氧化锆栅极绝缘子改善溶液法制备氧化铟锌锡薄膜晶体管的性能
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173189
Ravindra Naik Bukke, C. Avis, Taehun Kim, Jin Jang
{"title":"Improvement in performance of solution processed indium-zinc-tin oxide thin film transistors by using UV Ozone treatment on zirconium oxide gate insulator","authors":"Ravindra Naik Bukke, C. Avis, Taehun Kim, Jin Jang","doi":"10.1109/AM-FPD.2015.7173189","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173189","url":null,"abstract":"We studied solution processed amorphous indium-zinc-tin oxide (a-IZTO) TFTs, with spin coated ZrO<sub>x</sub> as the gate insulator. The ZrO<sub>x</sub> gate insulator was used without and with UV ozone treatment. The TFT without UV ozone treated ZrO<sub>x</sub> showed saturation mobility (μsat) of 0.89 cm<sup>2</sup>/V, turn-on voltage (V<sub>ON</sub>) of -0.45V, subthreshold swing (S.S) of 234mV/dec., and a current ratio I<sub>ON</sub>/I<sub>OFF</sub> of ~10<sup>7</sup>. The TFT with UV ozone treated ZrO<sub>x</sub> gate insulator exhibits μsat of 2.60 cm<sup>2</sup>/V, V<sub>ON</sub> of -0.6V, S.S. of 133 mV/dec., and an I<sub>ON</sub>/I<sub>OFF</sub> of ~10<sup>8</sup>. Also, as can be observed, the leakage current decreases, when the TFT was prepared with UV ozone treatment on ZrO<sub>x</sub> gate insulator.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121326673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvements of dot-size uniformity of the columnar InGaAs quantum dot structures with GaAs(Sb)/AlGaAsSb composite layers 用GaAs(Sb)/AlGaAsSb复合层改善柱状InGaAs量子点结构的点尺寸均匀性
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173231
Wei-Sheng Liu, Hsiao-Chien Lin, Ren-Yo Liu, Min Wu
{"title":"Improvements of dot-size uniformity of the columnar InGaAs quantum dot structures with GaAs(Sb)/AlGaAsSb composite layers","authors":"Wei-Sheng Liu, Hsiao-Chien Lin, Ren-Yo Liu, Min Wu","doi":"10.1109/AM-FPD.2015.7173231","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173231","url":null,"abstract":"This study grew high quality vertically-aligned InGaAs quantum dots (QDs) on a GaAs (001) substrate by using the molecular beam epitaxy system. The GaAsSb/AlGaAsSb composite overgrown layer was adopted to cap on InGaAs QDs for improving the dot size uniformity. From the experimental results, the Sb-contained overgrown layer was observed to reduce the In-Ga intermixing and contribute to the enhancement of the dot-size uniformity. Through the measurements of transmission emission microscopy, energy-dispersive X-ray spectroscopy (EDX) and electron-energy-loss spectrometry, vertically-aligned QDs with GaAsSb/AlGaAsSb composite structure show high dot density and dot-size uniformity. In addition, the Sb composition was observed accumulate on the top region of QDs because of the strain field distribution.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121362554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Production of efficient exciplex-based red, green, blue and white organic light-emitting diodes 生产高效的合成基红、绿、蓝、白有机发光二极管
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173201
Chih‐Hao Chang, Szu-Wei Wu, Sung-En Lin, Chih-Wei Huang, Chung-Tsung Hsieh, N. Chen, Hsin-hua Chang
{"title":"Production of efficient exciplex-based red, green, blue and white organic light-emitting diodes","authors":"Chih‐Hao Chang, Szu-Wei Wu, Sung-En Lin, Chih-Wei Huang, Chung-Tsung Hsieh, N. Chen, Hsin-hua Chang","doi":"10.1109/AM-FPD.2015.7173201","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173201","url":null,"abstract":"Recently, exciplex had drawn attention because of its potential for efficient electroluminescence or for use as a host in organic light-emitting diodes (OLEDs). In this study, four kinds of hole transport material/electron transport material combinations were examined to verify the formation of exciplex and the corresponding energy bandgaps. We successfully demonstrated that the combination of tris(4-carbazoyl-9-ylphenyl)amine (TCTA) and 3,5,3',5'-tetra(m-pyrid-3-yl)phenyl[1,1']biphenyl (BP4mPy) could form a stable exciplex emission with an adequate energy gap. Using exciplex as a host in red, green, and blue phosphorescent OLEDs with an identical trilayer architecture enabled effective energy transfer from exciplex to emitters, achieving corresponding efficiencies of 8.8%, 14.1%, and 15.8%. A maximum efficiency of 11.3% and stable emission was obtained in white OLEDs.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115784832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A novel donor-acceptor-acceptor molecular for planar mix heterojunction C60 based organic solar cells 一种新型的平面混合异质结C60基有机太阳能电池供体-受体-受体分子
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173237
Ya-Ting Yang, Chia-Hsun Chen, Hao-Chun Ting, Ken‐Tsung Wong, Tien‐Lung Chiu, Chi-feng Lin, Jiu-Haw Lee
{"title":"A novel donor-acceptor-acceptor molecular for planar mix heterojunction C60 based organic solar cells","authors":"Ya-Ting Yang, Chia-Hsun Chen, Hao-Chun Ting, Ken‐Tsung Wong, Tien‐Lung Chiu, Chi-feng Lin, Jiu-Haw Lee","doi":"10.1109/AM-FPD.2015.7173237","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173237","url":null,"abstract":"We have demonstrated a small molecule organic solar cell with a novel electron donor material based on donor-acceptor-acceptor (D-A-A) backbone. In such a device, 2.32%, 0.92 V, and 4.80 mA/cm2 in power conversion efficiency, open circuit voltage, and short circuit current density, respectively, was achieved with planar mix bulk heterojunction structure combined with C60 as the electron acceptor.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130385885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of thienoacene-based Organic Thin-Film Transistors with various interfacial layers 具有多种界面层的噻吩基有机薄膜晶体管的制备
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173217
Safizan Binti Shaari, S. Naka, H. Okada
{"title":"Fabrication of thienoacene-based Organic Thin-Film Transistors with various interfacial layers","authors":"Safizan Binti Shaari, S. Naka, H. Okada","doi":"10.1109/AM-FPD.2015.7173217","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173217","url":null,"abstract":"Organic Thin-Film Transistors (OTFTs) using thienoacene-based organic semiconductors with various insulating interfacial layers (IILs) between the organic semiconductor and the dielectric layer were investigated. A field-effect mobility and threshold voltage of OTFT without interfacial layer using C8-BTBT were 1.85 cm2/Vs and -5 V, respectively. By inserting the IIL especially for 2nd polymer materials and SAM treatment, the threshold voltage of the OTFT was slightly shifted to low threshold voltage. However, by using high-k materials such as HfO2 and Si3N4, the threshold voltage was increased to -0.8 V and -3.5 V, respectively. These results showed that threshold voltage is influenced by the using different interfacial layers due to the presence intermolecular interaction on the charge transports occur via a hopping mechanism at grain boundaries of organic semiconductor and dielectric interface.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121407417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Principles and possible system-on-wafer applications of SSI-LEDs ssi - led的原理和可能的片上系统应用
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173182
Y. Kuo
{"title":"Principles and possible system-on-wafer applications of SSI-LEDs","authors":"Y. Kuo","doi":"10.1109/AM-FPD.2015.7173182","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173182","url":null,"abstract":"A new type of Si-based LED has been demonstrated. In this paper, the basic device physics and operation principle are reviewed. The emitted light spectrum is similar to that of the sunlight in the visible wavelength range. The author discussed the possibility of preparing a system-on-wafer using this kind of device as the pixel element in the display integrated with the drivers, CPU, memory, etc. made of MOSFETs. Critical issues in realizing the new system are discussed.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132249257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-low power reflective LCD technology and its application for wearable devices 超低功耗反射LCD技术及其在可穿戴设备中的应用
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173245
Yoko Fukunaga, Takehiro Shima, T. Nakao, Y. Teranishi, Y. Nakajima
{"title":"Ultra-low power reflective LCD technology and its application for wearable devices","authors":"Yoko Fukunaga, Takehiro Shima, T. Nakao, Y. Teranishi, Y. Nakajima","doi":"10.1109/AM-FPD.2015.7173245","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173245","url":null,"abstract":"Using memory-in-pixel (MIP) technology, we have developed high image quality reflective LCDs with super-low power consumption suitable for wearable devices. Two types of MIP circuits have been developed: one is a memory drive type and the other is a hybrid type in which the pixel circuit is switchable between memory drive and normal drive. The memory drive type has 6-bit-per-pixel (bpp) memory and the resolution is 182-pixels-per-inch (ppi). The hybrid type has 3-bpp memory and can also display 18-bit color when selecting normal drive circuit and the resolution is 238.5-ppi.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114546038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescence characterization of LaOF:Yb3+/Er3+ up-conversion phosphor LaOF:Yb3+/Er3+上转换荧光粉的发光特性
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173205
Keito Ohyama, T. Nonaka, Shin-ichi Yamamoto
{"title":"Luminescence characterization of LaOF:Yb3+/Er3+ up-conversion phosphor","authors":"Keito Ohyama, T. Nonaka, Shin-ichi Yamamoto","doi":"10.1109/AM-FPD.2015.7173205","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173205","url":null,"abstract":"Oxides can be formed from many materials by air sintering after coating a substrate with a metal-organic decomposition (MOD) solution. This enables the preparation of thin films by simple processes such as spin coating. The up-conversion (UC) phosphor produced by the MOD method has a multifunctional potential for use in applications such as displays and solid-state lighting. In this study, a simple LaF3 oxide system was examined for use as the base material and host crystal of rare-earth (RE) elements for UC phosphor. The maximum emission luminescence of the UC phosphor was obtained when the mixing ratios of the base materials LaF3 and additive materials Yb2O3:Er2O3 were 1:0.01:0.01, respectively. When the mixing ratio of the phosphor, LaF:Yb:Er, was 1:0.01:0.01, 550 nm green and 670 nm red emissions were produced. The UC emission intensity could be controlled by varying the mixing ratio of the rare-earth materials.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130686439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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