制备高性能稳定氧化物薄膜晶体管的各种方法

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173187

Yeong-gyu Kim, J. Na, Won-Gi Kim, Hyun Jae Kim

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引用次数: 0

摘要

本文研究了利用真空和溶液法制备氧化薄膜晶体管(TFTs)的多种方法来提高其电性能和稳定性:通过控制氧分压的垂直梯度氧空位活性层(VGA)、顺序压力退火(SPA)和紫外线照射的过氧化氢活化(HPA)。通过采用这些技术，我们可以有效地控制活性层中的缺陷密度，从而获得高性能和稳定的氧化物tft。

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Various approaches for high performance and stable oxide thin-film transistors

We investigated various approaches to enhance the electrical performance and stability of oxide thin-film transistors (TFTs) fabricated with vacuum- and solution-process: vertically graded oxygen vacancy active layer (VGA) by control of oxygen partial pressure, sequential pressure annealing (SPA), and hydrogen peroxide activation (HPA) using ultraviolet irradiation. By adopting these techniques, we could effectively control the defect densities in active layer which resulted in high performance and stable oxide TFTs.

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来源期刊

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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