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2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

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Evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O analyzed by photoelectron emission yield experiments 利用光电子发射产率实验分析了非晶in - ga - zn - o中氢相关缺陷态的演化
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173219
Kazushi Hayashi, A. Hino, Hiroaki Tao, Mototaka Ochi, H. Goto, T. Kugimiya
{"title":"Evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O analyzed by photoelectron emission yield experiments","authors":"Kazushi Hayashi, A. Hino, Hiroaki Tao, Mototaka Ochi, H. Goto, T. Kugimiya","doi":"10.1109/AM-FPD.2015.7173219","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173219","url":null,"abstract":"Total photoyield spectroscopy (TPYS) was applied to investigate the evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O (a-IGZO) thin films. It was found that the defect states located at around 4.3 eV from the vacuum level were formed as a result of hydrogenation. After thermal annealing at 300 °C, the onset of the TPYS spectra shifted to 4.15 eV. As the annealing temperature was increased, the photoyield from the defect states decreased, implying that there was outdiffusion of hydrogen with Zn from the a-IGZO. These experiments produced direct evidence which shows the formation of defect states as a result of hydrogen incorporation into the a-IGZO thin films.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"24 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115635257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A wide absorption donor-acceptor active layer for vacuum-deposited organic photovoltaic devices with a 6.8 % power conversion efficiency 一种用于真空沉积有机光伏器件的宽吸收供体-受体有源层，其功率转换效率为6.8%
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173243
Ya‐Ze Li, T. Su, Chun‐Kai Wang, Ken‐Tsung Wong, Shun‐Wei Liu
{"title":"A wide absorption donor-acceptor active layer for vacuum-deposited organic photovoltaic devices with a 6.8 % power conversion efficiency","authors":"Ya‐Ze Li, T. Su, Chun‐Kai Wang, Ken‐Tsung Wong, Shun‐Wei Liu","doi":"10.1109/AM-FPD.2015.7173243","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173243","url":null,"abstract":"In this letter, the authors present a highly efficient small-molecule organic photovoltaic (OPV) with a donor-acceptor bulk-heterojunction of a novel electron donor material and C70. As a result, the OPV exhibited a highest power conversion efficiency of 6.8%, an open circuit voltage of 0.79 V, a short-circuit current density of 16.13 mA/cm2 and a fill factor (FF) of 53.9 % under 1 sun solar illumination (AM 1.5G).","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127168636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Air-stable N-type organic microribbon transistors based on perylene diimides derivatives 基于苝二亚胺衍生物的空气稳定n型有机微带晶体管
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173220
Pin-Yen Tseng, Gen-Wen Hsieh, Chengwei Wang, C. Hung, Chih-Wen Tsai
{"title":"Air-stable N-type organic microribbon transistors based on perylene diimides derivatives","authors":"Pin-Yen Tseng, Gen-Wen Hsieh, Chengwei Wang, C. Hung, Chih-Wen Tsai","doi":"10.1109/AM-FPD.2015.7173220","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173220","url":null,"abstract":"We report a new type of organic microribbon via solution phase self-assembly from a conjugated small molecule N,N'-bis[2-(4-fluoro-phenyl)-ethyl]-3,4,9,10-perylenetetradicarboximide (4F-PEPTC) for use in organic field effect transistors. Devices based on a network of 4F-PEPTC microribbons show a typical n-channel field effect behavior with average current ratio > 103 and exhibit excellent air stability in ambient air over 30 days.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123477671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical and experimental study of earth-abundant solar cell materials 地球上丰富的太阳能电池材料的理论和实验研究
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173196
Yanfa Yan, W. Yin, T. Shi, F. Hong, J. Ge, Y. Yue, W. Ke, D. Zhao, A. Cimaroli
{"title":"Theoretical and experimental study of earth-abundant solar cell materials","authors":"Yanfa Yan, W. Yin, T. Shi, F. Hong, J. Ge, Y. Yue, W. Ke, D. Zhao, A. Cimaroli","doi":"10.1109/AM-FPD.2015.7173196","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173196","url":null,"abstract":"In this paper, we present theoretical and experimental studies of two representative earth-abundant, thin-film solar cell materials: Cu<sub>2</sub>ZnSnS<sub>4</sub> and CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>. Using first-principles density-functional theory, we show that both Cu<sub>2</sub>ZnSnS<sub>4</sub> and CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> exhibit electronic and optical properties that are suitable for solar cell applications. However, the defect physics are rather different in these two earth-abundant solar cell materials: the dominant defects produce deep gap states in Cu<sub>2</sub>ZnSnS<sub>4</sub> but only shallow states in CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>, indicating that CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> is a more promising candidate for achieving high efficiency solar cells. Through the synthesis and characterization of Cu<sub>2</sub>ZnSnS<sub>4</sub> and CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based thin-film solar cells, we show that CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based thin-film solar cells exhibit significantly higher performance than Cu<sub>2</sub>ZnSnS<sub>4</sub>-based solar cells.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117305435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature and illuminance detections by hybrid-type carrier-generation sensors using n-type and p-type poly-Si TFTs 采用n型和p型多晶硅tft的混合型载流子传感器进行温度和照度检测
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173222
Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, T. Matsuda, M. Kimura
{"title":"Temperature and illuminance detections by hybrid-type carrier-generation sensors using n-type and p-type poly-Si TFTs","authors":"Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, T. Matsuda, M. Kimura","doi":"10.1109/AM-FPD.2015.7173222","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173222","url":null,"abstract":"We have evaluated temperature dependences of transistor characteristics in n-type and p-type poly-Si TFTs with and without visible light illumination. It is found that the temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, the temperature dependences change with visible light illumination, and the changes are different between the n-type and p-type poly-Si TFTs. Based on these results, we proposed a detection method to obtain simultaneously temperature and illuminance by hybrid-type carrier-generation sensors using n-type and p-type Poly-Si TFTs.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128377327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasmonic and metal oxide systems for high performance OLEDs and OPVs 用于高性能oled和opv的等离子体和金属氧化物系统
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173197
W. Choy
{"title":"Plasmonic and metal oxide systems for high performance OLEDs and OPVs","authors":"W. Choy","doi":"10.1109/AM-FPD.2015.7173197","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173197","url":null,"abstract":"Developing high performance organic photovoltaics (OPVs) and organic light emitting diodes (OLEDs) are highly relevant and advantageous to the practical applications of the emerging flexible organic optoelectronics. Herein, through the incorporation of plasmonic and metal oxide systems, we report several effective approaches for enhancing the optical absorption and charge carrier extraction in organic optoelectronic devices. We demonstrate that the power conversion efficiency of organic solar cells can be improved to ~9.2% depending on the plasmonic structures, device architectures, and the organic materials.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"44 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130538320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of top gate bias on NBIS in dual gate a-IGZO TFTs 双栅a-IGZO TFTs中顶栅偏置对NBIS的影响
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173215
Eunji Lee, Md Delwar Hossain Chowdhury, Jin Jang
{"title":"Effect of top gate bias on NBIS in dual gate a-IGZO TFTs","authors":"Eunji Lee, Md Delwar Hossain Chowdhury, Jin Jang","doi":"10.1109/AM-FPD.2015.7173215","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173215","url":null,"abstract":"We report the effects of top gate bias (V<sub>TG</sub>) on negative bias illumination stress (NBIS) applied at bottom gate terminal in dual gate amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT), while transfer characteristics measured at bottom gate terminal before and after stress. NBIS in a-IGZO TFTs show negative transfer shift due to the formation of positive charges, likely ionization of oxygen vacancies (V<sub>O</sub> → V<sub>O</sub><sup>+</sup>/V<sub>O</sub><sup>2+</sup>) and/or hole traps in Gate insulator/a-IGZO interface and a-IGZO bulk. We observed -3.26V shift after NBIS, for -10V bias at VTG, which decreases to -1.3V for V<sub>TG</sub> = +10V. It clearly revels the formation of less defects in IGZO channel when the Fermi level is shifted upward by positive top gate bias.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130131332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanocrystallized CdS for detection of UV light with picowatt sensitivity through single shot KrF laser treatment 单次KrF激光处理用于皮瓦灵敏度紫外光检测的纳米晶CdS
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173247
Keng-Te Lin, Hsuen‐Li Chen, Yu-Lun Liu, Y. Tseng, Cheng-Hsi Lin, H. Chang, Jui-Min Liu, Y. Lai
{"title":"Nanocrystallized CdS for detection of UV light with picowatt sensitivity through single shot KrF laser treatment","authors":"Keng-Te Lin, Hsuen‐Li Chen, Yu-Lun Liu, Y. Tseng, Cheng-Hsi Lin, H. Chang, Jui-Min Liu, Y. Lai","doi":"10.1109/AM-FPD.2015.7173247","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173247","url":null,"abstract":"In this study we demonstrated that the improvement of detection capability of cadmium sulfide (CdS) photoconductors in the ultraviolet (UV) regime is much larger than that in the visible regime, suggesting that the deep UV laser treated CdS devices are very suitable for low-light detection in the UV regime. In addition, we determined that a nanocrystallized CdS photoconductor can behave as a picowatt-sensitive detector in the UV regime after ultra-shallow-region crystallization of the CdS film upon a single shot from a KrF laser. The strategy proposed herein appears to have great potential for application in the development of CdS photoconductors for picowatt-level detection of UV light with low power consumption.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132712804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and functionalization of two-dimensional materials: Graphene, hexagonal boron nitride, and transition metal dichalcogenides 二维材料:石墨烯、六方氮化硼和过渡金属二硫族化合物的合成和功能化
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173193
H. Hibino, Shengnan Wang, C. Orofeo, Satoru Suzuki
{"title":"Synthesis and functionalization of two-dimensional materials: Graphene, hexagonal boron nitride, and transition metal dichalcogenides","authors":"H. Hibino, Shengnan Wang, C. Orofeo, Satoru Suzuki","doi":"10.1109/AM-FPD.2015.7173193","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173193","url":null,"abstract":"We are conducting a wide range of research on graphene and related two-dimensional materials from basic physics to device applications towards their electronics/photonics applications. In this paper, we review our recent research activities on the growth and functionalization of graphene, hexagonal boron nitride, and transition metal dichalcogenides with the emphasis on the following four topics; Raman spectroscopic visualization of grain boundaries in chemical-vapor-deposition (CVD) grown graphene by isotope labeling, CVD of h-BN on heteroepitaxial Co films, synthesis of layer-controlled MoS2 and WS2 sheets by sulfurization of thin metal films, and photodetection with graphene p-n junction fabricated using interface modification.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131311325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Molecular alignment control of pentacene molecules deposited on a photocrosslinkable liquid-crystalline polymer film with various thicknesses 不同厚度光交联液晶聚合物膜上沉积并五苯分子的分子取向控制
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173229
M. Kondo, Takao Nakanishi, A. Heya, N. Matsuo, N. Kawatsuki
{"title":"Molecular alignment control of pentacene molecules deposited on a photocrosslinkable liquid-crystalline polymer film with various thicknesses","authors":"M. Kondo, Takao Nakanishi, A. Heya, N. Matsuo, N. Kawatsuki","doi":"10.1109/AM-FPD.2015.7173229","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173229","url":null,"abstract":"Molecular alignment behavior of pentacene molecules sublimed on photoreactive liquid-crystalline polymer (PLCP) layer that are work as a photoalignment layer were explored. Pentacene molecule aligned perpendicular to the director of PLCP with edge-on to the substrate while pentacene on surface region of the bilayer forms the same structure as pentacene-alone substrate that covered the anisotropic edge-on pentacene structure on PLCP surface.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117300633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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