采用n型和p型多晶硅tft的混合型载流子传感器进行温度和照度检测

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173222

Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, T. Matsuda, M. Kimura

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引用次数: 0

摘要

我们评估了n型和p型多晶硅tft在可见光照射和不可见光照射下晶体管特性的温度依赖性。研究发现，在n型和p型tft中，关漏电流的温度依赖性远大于通漏电流。此外，温度依赖性随可见光光照的变化而变化，且n型和p型多晶硅tft的温度依赖性不同。基于这些结果，我们提出了一种利用n型和p型多晶硅tft的混合型载流子产生传感器同时获得温度和照度的检测方法。

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Temperature and illuminance detections by hybrid-type carrier-generation sensors using n-type and p-type poly-Si TFTs

We have evaluated temperature dependences of transistor characteristics in n-type and p-type poly-Si TFTs with and without visible light illumination. It is found that the temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, the temperature dependences change with visible light illumination, and the changes are different between the n-type and p-type poly-Si TFTs. Based on these results, we proposed a detection method to obtain simultaneously temperature and illuminance by hybrid-type carrier-generation sensors using n-type and p-type Poly-Si TFTs.

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2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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