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2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

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The impurity effects on OLEDs via transient electroluminescence analysis 通过瞬态电致发光分析杂质对oled的影响
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173184
Chi-feng Lin, Guan-Ting Lin, Chia-Cheng Jian
{"title":"The impurity effects on OLEDs via transient electroluminescence analysis","authors":"Chi-feng Lin, Guan-Ting Lin, Chia-Cheng Jian","doi":"10.1109/AM-FPD.2015.7173184","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173184","url":null,"abstract":"In this report, the influences of the impurities to the performance of OLEDs were discussed. The removing of the impurities improve the carrier injection ability and also carrier transporting behavior, resulted in the improvements of device efficiency. The transient electroluminescence (TREL) analysis was also used to discuss the carrier transporting behavior of OLEDs with various material purification times. The change of the delay time and rise time showed that the carrier injection ability was improve and the carrier transporting characteristic became more non-dispersive after the purifications.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115648872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of deposition inclination angle on the mechanical, optical and electrical characteristics of Al-doped ZnO films 沉积倾角对掺杂al ZnO薄膜机械、光学和电学特性的影响
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173228
T. Li, J. Lin
{"title":"Effects of deposition inclination angle on the mechanical, optical and electrical characteristics of Al-doped ZnO films","authors":"T. Li, J. Lin","doi":"10.1109/AM-FPD.2015.7173228","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173228","url":null,"abstract":"A flat plate in the deposition stage is designed to be tilted flexibly to form an inclination angle between an ion beam and the direction normal to a polyethylene terephthalate (PET) substrate. Five kinds of PET/aluminum-doped zinc oxide specimen were prepared to examine the effects of inclination angle on the mechanical, optical and electrical properties. Increase in the inclination angle is advantageous for the increase in thin film porosity before reaching its asymptotic value. An appropriate choice in a nonzero inclination angle can increase the mechanical properties in hardness and reduced module and carrier concentration, and decrease the carrier mobility and electrical resistivity of the specimen greatly in a simple way.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"410 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116037405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon heterojunction thin-film transistors for active-matrix flat-panel and flexible displays 用于有源矩阵平板和柔性显示器的硅异质结薄膜晶体管
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173190
B. Hekmatshoar
{"title":"Silicon heterojunction thin-film transistors for active-matrix flat-panel and flexible displays","authors":"B. Hekmatshoar","doi":"10.1109/AM-FPD.2015.7173190","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173190","url":null,"abstract":"The prospect of thin-film heterojunction field-effect transistors comprised of hydrogenated amorphous Si gate contacts on crystalline Si substrates for applications in large-area electronics and particularly flat-panel and flexible displays is discussed. Several advantages of these devices including low-voltage operation, high stability, immunity to floating body effects, low-temperature processing and design flexibility are explained and verified experimentally.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"328 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116054778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel Double-Gate Thin-Film Transistors with split-gate and RSD design 一种新型分栅RSD双栅薄膜晶体管
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173210
Cheng-Hao You, Xiangyu Chen, F. Chien
{"title":"A novel Double-Gate Thin-Film Transistors with split-gate and RSD design","authors":"Cheng-Hao You, Xiangyu Chen, F. Chien","doi":"10.1109/AM-FPD.2015.7173210","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173210","url":null,"abstract":"In this paper, we propose a Double-Gate Thin-Film Transistors with split-gate structure and raised source/drain (RSD) structure (DGSG-TFT) design. This structure has double-gate with RSD structure, and the top gate is a split-gate structure design. The split-gate and RSD design can reduce the impact-ionization effect, and the double-gate design can further improve the device kink effect performance.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122556183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All-solid-state electrochromic thin films for optical iris application 光学虹膜用全固态电致变色薄膜
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173230
Min-Chuan Wang, Ming-Hao Hsieh, W. Hsu, W. Tsai, D. Jan
{"title":"All-solid-state electrochromic thin films for optical iris application","authors":"Min-Chuan Wang, Ming-Hao Hsieh, W. Hsu, W. Tsai, D. Jan","doi":"10.1109/AM-FPD.2015.7173230","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173230","url":null,"abstract":"We have successfully developed an all-solid-state electrochromic device (ECD) as the optical iris for a camera lens application. The all-solid-state ECD could potentially control the transmittance from 88.5% to 6.5% at 633nm. The patterned electrochromic solid state device with the one substrate structure of NiO/Ta2O5/WO3 on ITO coated glass was prepared at room temperature by reactive DC magnetron sputtering technique and shadow mask method. With the application of ECDs, it is possible to directly attach the electrochromic optical iris onto a camera lens without any mechanical equipment. Furthermore, the low power consumption of 16.75mW per switching cycle at voltages as low as 5.5 V, make ECDs the ideal components for battery powered mobile applications.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130314273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Boron subphthalocyanine-based organic photovoltaic device with record high open circuit voltage 以亚酞菁硼为基础的有机光伏器件，具有创记录的高开路电压
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173236
Po-Sheng Wang, Cheng-Chieh Lee, Jiu-Haw Lee, Leeyih Wang, Chi-feng Lin, Tien‐Lung Chiu
{"title":"Boron subphthalocyanine-based organic photovoltaic device with record high open circuit voltage","authors":"Po-Sheng Wang, Cheng-Chieh Lee, Jiu-Haw Lee, Leeyih Wang, Chi-feng Lin, Tien‐Lung Chiu","doi":"10.1109/AM-FPD.2015.7173236","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173236","url":null,"abstract":"In this work, we demonstrated an inverted planar heterojunction organic photovoltaic (OPV) device with boron subphthalocyanine (SubPc) material. In this device, ZnO was used as the electron extraction layer, which was coated with ethoxylated polyethylenimine (PEIE) for smoothen the ZnO surface. Open circuit voltage of this OPV can be as high as 1.36 eV, which is close to the theoretical limit of SubPc-based device.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115078191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reduction in optical reflection loss at intermediate adhesive layer for mechanical stacked multi-junction solar cells 减少机械叠层多结太阳能电池中间粘结层的光学反射损耗
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-02-06 DOI: 10.1109/AM-FPD.2015.7173240
S. Kimura, S. Yoshidomi, M. Hasumi, T. Sameshima
{"title":"Reduction in optical reflection loss at intermediate adhesive layer for mechanical stacked multi-junction solar cells","authors":"S. Kimura, S. Yoshidomi, M. Hasumi, T. Sameshima","doi":"10.1109/AM-FPD.2015.7173240","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173240","url":null,"abstract":"We propose a method of reduction in optical reflection loss by transparent conductive Indium Gallium Zinc Oxide (IGZO) for the purpose of fabricating mechanical stacked solar cells. Si and Ge substrates coated with 200 nm thick 0.058 Ωcm IGZO layers were stacked with epoxy-type transparent adhesive dispersed with 20 μm sized Indium Thin Oxide (ITO) particles to form a structure of Si/IGZO/adhesive/IGZO/Ge. Marked low reflectively ranged from 0.33 to 0.38 in wavelength between 1150 and 1600 nm were achieved while conventional stacked sample with the structure of Si/adhesive/Ge had reflectivity ranged from 0.51 to 0.52. Numerical analysis revealed that reduction in optical reflectivity was realized by optical interference matching of IGZO layers and proposed the best thickness of IGZO of 185 nm.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"315 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116285913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nitride devices prepared on flexible substrates 柔性衬底上制备的氮化物器件
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2014-07-08 DOI: 10.1109/AM-FPD.2015.7173192
H. Fujioka, K. Ueno, A. Kobayashi, J. Ohta
{"title":"Nitride devices prepared on flexible substrates","authors":"H. Fujioka, K. Ueno, A. Kobayashi, J. Ohta","doi":"10.1109/AM-FPD.2015.7173192","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173192","url":null,"abstract":"In this presentation, we will demonstrate successful operation of nitride devices prepared on various low cost substrates by the use of a newly developed low temperature epitaxial growth technique named pulsed sputtering deposition (PSD). We have found that performances of GaN devices such as LEDs or HEMTs fabricated with PSD are as good as those fabricated with conventional MOCVD. We have also found that the use of PSD low temperature epitaxial growth technique allows us to utilize chemically vulnerable materials that have never been used as substrates for GaN based devices. These results indicate that the low growth temperature PSD epitaxial process is quite advantageous for fabrication of nitride devices on various flexible substrates.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126231300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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