A novel Double-Gate Thin-Film Transistors with split-gate and RSD design

Abstract

In this paper, we propose a Double-Gate Thin-Film Transistors with split-gate structure and raised source/drain (RSD) structure (DGSG-TFT) design. This structure has double-gate with RSD structure, and the top gate is a split-gate structure design. The split-gate and RSD design can reduce the impact-ionization effect, and the double-gate design can further improve the device kink effect performance.