{"title":"用于有源矩阵平板和柔性显示器的硅异质结薄膜晶体管","authors":"B. Hekmatshoar","doi":"10.1109/AM-FPD.2015.7173190","DOIUrl":null,"url":null,"abstract":"The prospect of thin-film heterojunction field-effect transistors comprised of hydrogenated amorphous Si gate contacts on crystalline Si substrates for applications in large-area electronics and particularly flat-panel and flexible displays is discussed. Several advantages of these devices including low-voltage operation, high stability, immunity to floating body effects, low-temperature processing and design flexibility are explained and verified experimentally.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"328 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Silicon heterojunction thin-film transistors for active-matrix flat-panel and flexible displays\",\"authors\":\"B. Hekmatshoar\",\"doi\":\"10.1109/AM-FPD.2015.7173190\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The prospect of thin-film heterojunction field-effect transistors comprised of hydrogenated amorphous Si gate contacts on crystalline Si substrates for applications in large-area electronics and particularly flat-panel and flexible displays is discussed. Several advantages of these devices including low-voltage operation, high stability, immunity to floating body effects, low-temperature processing and design flexibility are explained and verified experimentally.\",\"PeriodicalId\":243757,\"journal\":{\"name\":\"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"328 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2015.7173190\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2015.7173190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon heterojunction thin-film transistors for active-matrix flat-panel and flexible displays
The prospect of thin-film heterojunction field-effect transistors comprised of hydrogenated amorphous Si gate contacts on crystalline Si substrates for applications in large-area electronics and particularly flat-panel and flexible displays is discussed. Several advantages of these devices including low-voltage operation, high stability, immunity to floating body effects, low-temperature processing and design flexibility are explained and verified experimentally.