一种新型分栅RSD双栅薄膜晶体管

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173210

Cheng-Hao You, Xiangyu Chen, F. Chien

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引用次数: 0

摘要

在本文中，我们提出了一种双栅薄膜晶体管的分栅结构和提高源漏(RSD)结构(DGSG-TFT)设计。该结构为双闸门RSD结构，顶闸门为分闸结构设计。分栅和RSD设计可以降低冲击电离效应，双栅设计可以进一步提高器件扭结效应性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel Double-Gate Thin-Film Transistors with split-gate and RSD design

In this paper, we propose a Double-Gate Thin-Film Transistors with split-gate structure and raised source/drain (RSD) structure (DGSG-TFT) design. This structure has double-gate with RSD structure, and the top gate is a split-gate structure design. The split-gate and RSD design can reduce the impact-ionization effect, and the double-gate design can further improve the device kink effect performance.

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来源期刊

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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