利用光电子发射产率实验分析了非晶in - ga - zn - o中氢相关缺陷态的演化

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173219

Kazushi Hayashi, A. Hino, Hiroaki Tao, Mototaka Ochi, H. Goto, T. Kugimiya

{"title":"利用光电子发射产率实验分析了非晶in - ga - zn - o中氢相关缺陷态的演化","authors":"Kazushi Hayashi, A. Hino, Hiroaki Tao, Mototaka Ochi, H. Goto, T. Kugimiya","doi":"10.1109/AM-FPD.2015.7173219","DOIUrl":null,"url":null,"abstract":"Total photoyield spectroscopy (TPYS) was applied to investigate the evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O (a-IGZO) thin films. It was found that the defect states located at around 4.3 eV from the vacuum level were formed as a result of hydrogenation. After thermal annealing at 300 °C, the onset of the TPYS spectra shifted to 4.15 eV. As the annealing temperature was increased, the photoyield from the defect states decreased, implying that there was outdiffusion of hydrogen with Zn from the a-IGZO. These experiments produced direct evidence which shows the formation of defect states as a result of hydrogen incorporation into the a-IGZO thin films.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"24 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O analyzed by photoelectron emission yield experiments\",\"authors\":\"Kazushi Hayashi, A. Hino, Hiroaki Tao, Mototaka Ochi, H. Goto, T. Kugimiya\",\"doi\":\"10.1109/AM-FPD.2015.7173219\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Total photoyield spectroscopy (TPYS) was applied to investigate the evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O (a-IGZO) thin films. It was found that the defect states located at around 4.3 eV from the vacuum level were formed as a result of hydrogenation. After thermal annealing at 300 °C, the onset of the TPYS spectra shifted to 4.15 eV. As the annealing temperature was increased, the photoyield from the defect states decreased, implying that there was outdiffusion of hydrogen with Zn from the a-IGZO. These experiments produced direct evidence which shows the formation of defect states as a result of hydrogen incorporation into the a-IGZO thin films.\",\"PeriodicalId\":243757,\"journal\":{\"name\":\"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"24 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2015.7173219\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2015.7173219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用全光产率光谱(TPYS)研究了非晶in - ga - zn - o (a-IGZO)薄膜中氢相关缺陷态的演化过程。结果表明，氢化反应形成了距离真空4.3 eV左右的缺陷态。经300℃热处理后，TPYS光谱的起始点移至4.15 eV。随着退火温度的升高，缺陷态的光产率降低，表明氢和Zn从a-IGZO向外扩散。这些实验直接证明了a- igzo薄膜中氢的掺入导致了缺陷态的形成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O analyzed by photoelectron emission yield experiments

Total photoyield spectroscopy (TPYS) was applied to investigate the evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O (a-IGZO) thin films. It was found that the defect states located at around 4.3 eV from the vacuum level were formed as a result of hydrogenation. After thermal annealing at 300 °C, the onset of the TPYS spectra shifted to 4.15 eV. As the annealing temperature was increased, the photoyield from the defect states decreased, implying that there was outdiffusion of hydrogen with Zn from the a-IGZO. These experiments produced direct evidence which shows the formation of defect states as a result of hydrogen incorporation into the a-IGZO thin films.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

自引率

0.00%

发文量