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2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

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Improvement of poly-Ge TFT characteristics by atomic hydrogen annealing 原子氢退火改善聚锗TFT特性
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173209
A. Heya, S. Hirano, N. Matsuo
{"title":"Improvement of poly-Ge TFT characteristics by atomic hydrogen annealing","authors":"A. Heya, S. Hirano, N. Matsuo","doi":"10.1109/AM-FPD.2015.7173209","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173209","url":null,"abstract":"Ge thin film is expected as an active layer in a thin-film transistor (TFT) because the electron mobility of Ge is larger than that of Si. In this study, the crystallization of Ge thin film by soft X-ray irradiation and the improvement of interface property of poly-Ge/SiO2 in poly-Ge TFT by atomic hydrogen annealing (AHA) are investigated for realization of high-performance poly-Ge TFT. The drain current (Id) did not depend on the gate voltage (Vg) before AHA treatment. However, as the AHA treatment time increased, the Id decreased and the Id came to depend on Vg. The on/off ratio of 10 was obtained by AHA for 360 min. It is found that the defect density in poly-Ge film and at poly-Ge/SiO2 interface can be reduced by AHA slightly.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121298825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of luminescence technology for solar PV industry 发光技术在太阳能光伏产业中的应用
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173232
Shih-Hung Lin, Tzu-Huan Cheng
{"title":"Application of luminescence technology for solar PV industry","authors":"Shih-Hung Lin, Tzu-Huan Cheng","doi":"10.1109/AM-FPD.2015.7173232","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173232","url":null,"abstract":"The luminescence technology is a non-destructive testing and can be applied for kinds of solar cells such as c-Si, thin film (α-Si, CIGS, and CdTe) and multi-junction solar cells. The luminescence intensity is correlated to the quality of absorber or junction and suitable to be developed as monitors of device property during process. Photoluminescence (PL) and Electroluminescence (EL) are most common luminescence metrologies and they can help to identify the band gap, defect level, defect density, radiative recombination coefficient, junction quality, and implied open circuit voltage (Voc). The 2D PL/EL image can help to evaluate the uniformity and physical defect information such as crack, contact disconnection, shunting points, serious resistance distribution, and impurity. The failure analysis of long-term reliability test (light illumination and thermal stress) by the combination of PL/EL technology can help to identify the key root cause. The qualitative analysis of PL/EL metrologies can apply for process correlation to stabilize the production line and/or further improve the efficiency.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121512473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficiency improvement of current gain in organic up-conversion devices by maintaining hole blocking property at interface of anode/charge generation layer 维持阳极/电荷产生层界面空穴阻塞特性提高有机上转换器件电流增益效率
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173198
Ya‐Ze Li, Shao‐Yu Lin, T. Su, Shun‐Wei Liu, C. Lee
{"title":"Efficiency improvement of current gain in organic up-conversion devices by maintaining hole blocking property at interface of anode/charge generation layer","authors":"Ya‐Ze Li, Shao‐Yu Lin, T. Su, Shun‐Wei Liu, C. Lee","doi":"10.1109/AM-FPD.2015.7173198","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173198","url":null,"abstract":"The organic donor/acceptor of chloroaluminum phthalocyanine and C70 as a charge generation layer (CGL) enabled a realization of near-infrared (NIR) image sensing for a highly efficient organic up-conversion device. The well-alignment energy level of CGL played an important role in controlling the conduction-path of a hole carrier for our device (i.e., electron-rich type), which effectively blocked the injection carrier at the interface of the anode/CGL. The proposed up-converter used was a device configuration of ITO/CGL/1,1-bis(di-4-tolylaminophenyl) cyclohexane/4,4'-Bis(N-carbazolyl)-1,1'-biphenyl doped with fac-tris (2-phenylpyridine) iridium (III)/2-phenyl-9-(3-(2-phenyl-1,10-phenanthrolin-9-yl)phenyl)-1,10-phenanthroline/CS2CO3/Ag to provide a green emission under NIR illumination. As a result, an optimal device with a current gain as high as 10 000 (i.e., on-off ratio from dark to light testing) at a driving voltage of 3 V was successfully achieved. In addition, our transparent device (i.e., device with ultra-thin cathode of ~ 12 nm Ag) was proposed from a clear three-dimensional image of a real object with a high resolution of 420 dots per inch, indicating the high sensitivity of this organic device for NIR sensing.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134243376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of self-heating phenomenon in oxide thin-film transistors under pulsed bias voltage 脉冲偏置电压下氧化薄膜晶体管自热现象分析
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173256
Kahori Kise, S. Tomai, H. Yamazaki, Satoshi Urakawa, K. Yano, Dapeng Wang, M. Furuta, M. Horita, M. Fujii, Y. Ishikawa, Y. Uraoka
{"title":"Analysis of self-heating phenomenon in oxide thin-film transistors under pulsed bias voltage","authors":"Kahori Kise, S. Tomai, H. Yamazaki, Satoshi Urakawa, K. Yano, Dapeng Wang, M. Furuta, M. Horita, M. Fujii, Y. Ishikawa, Y. Uraoka","doi":"10.1109/AM-FPD.2015.7173256","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173256","url":null,"abstract":"Degradation by Joule heating of amorphous metal oxide thin-film transistors is one of the important issues for realizing next-generation displays. To clarify the self-heating degradation mechanism, it is indispensable to analyze the detailed temperature change of TFTs. In this study, we proposed a technique to suppress deterioration caused by self-heating in terms of driving methods, and investigated relation on the temperature change in the degradation mechanism caused by self-heating.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"304 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115909106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
P-channel oxide thin film transistors using sol-gel solution processed nickel oxide p沟道氧化薄膜晶体管采用溶胶-凝胶溶液加工氧化镍
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173218
Tengda Lin, Xiuling Li, Jin Jang
{"title":"P-channel oxide thin film transistors using sol-gel solution processed nickel oxide","authors":"Tengda Lin, Xiuling Li, Jin Jang","doi":"10.1109/AM-FPD.2015.7173218","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173218","url":null,"abstract":"Nickel oxide (NiO) thin film was synthesized on glass substrate by low-cost sol-gel solution process at 300 °C under ambient condition. The optical properties confirmed the high transparency over visible region and estimated optical band gap of 3.53 eV. Bottom-gate top-contact thin film transistors (TFTs) employing NiO film as active layer were fabricated via conventional photolithography. The electrical property of the NiO TFTs exhibited p-channel operation and field effect mobility of 0.077 cm2/V·s. This work reported the potential of NiO TFTs with p-channel characteristics using easily accessed solution process.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123170061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Lifetime study of Dye sensitized solar cells 染料敏化太阳能电池寿命研究
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173233
Chi-feng Lin, Wei-gang Huang, Pin-Hung Chen, J. Kung
{"title":"Lifetime study of Dye sensitized solar cells","authors":"Chi-feng Lin, Wei-gang Huang, Pin-Hung Chen, J. Kung","doi":"10.1109/AM-FPD.2015.7173233","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173233","url":null,"abstract":"In this report, we discuss the performance change of the DSSCs by the time. It is found that the key factors which influence the device performance of DSSCs depend on the oxidation of working electrode, degradation of dye under illumination, and the solvent evaporate of the electrolyte. The oxidation of working electrode results the increase of VOC while the degradation and desorption of the dye result in the decrease of JSC and cannot be recovered. Solvent volatilization of the electrolyte also decreased the JSC of the device but could be recovered by re-injecting the solvent.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"50 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129346362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Cobalt derivatives as counter electrodes in dye sensitized solar cells 钴衍生物在染料敏化太阳能电池中的对电极
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173248
Chi-feng Lin, Pin-Hung Chen, Ting-Hsuan Hsieh, Hsieh-Cheng Han, K. Chiu
{"title":"Cobalt derivatives as counter electrodes in dye sensitized solar cells","authors":"Chi-feng Lin, Pin-Hung Chen, Ting-Hsuan Hsieh, Hsieh-Cheng Han, K. Chiu","doi":"10.1109/AM-FPD.2015.7173248","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173248","url":null,"abstract":"In this report, we composite cobalt and carbon black (CB) as the counter electrodes to replace the conventional platinum in dye sensitized solar cells (DSSCs). The basic cobalt derivatives, Co12 and Co15, showed the capability with proper JSC and VOC, but poor FF of the device. After mixing with CB, the device performances were enhanced obviously. The further improve was done by combine Co derivative and CB to form the new type material CoCB as the counter electrode. The great conductivity and redox ability enhanced both JSC and VOC, the optimized device showed the efficiency of 7.38%, higher than the conventional Pt electrode of 7.00%. The result showed the potential of cobalt derivatives as the counter electrode of DSSCs.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123753007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Frequency modulation-type capacitance sensor using amorphous In-Ga-Zn-O thin-film transistors 调频型电容传感器采用非晶In-Ga-Zn-O薄膜晶体管
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173223
Yuki Koga, T. Matsuda, M. Furuta, M. Kimura
{"title":"Frequency modulation-type capacitance sensor using amorphous In-Ga-Zn-O thin-film transistors","authors":"Yuki Koga, T. Matsuda, M. Furuta, M. Kimura","doi":"10.1109/AM-FPD.2015.7173223","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173223","url":null,"abstract":"We have developed a frequency modulation-type capacitance sensor using amorphous In-Ga-Zn-O (α-IGZO) thin-film transistors (TFTs) for integrated touchpanels. This capacitance sensor consists of a ring oscillator, whose one stage is replaced by a reset transistor, sensing transistor, and sensing electrode. The sensing electrode becomes one terminal when the other terminal is added by finger to form a sensing capacitor. The ring oscillator consists of pseudo CMOS inverters. We confirm that the oscillation output changes when the other terminal is added. This result indicates that this capacitance sensor can be applied to integrated touchpanels on flatpanel displays.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127633518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bending performance and bias-stress stability of the In-Ga-Zn-O TFTs prepared on flexible PEN substrates with optimum barrier structures 具有最佳势垒结构的柔性PEN衬底制备In-Ga-Zn-O tft的弯曲性能和偏应力稳定性
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173213
Min-Ji Park, Da-Jung Yun, M. Ryu, Jong-Heon Yang, JaeEun Pi, Gi-Hyun Kim, Chi-Sun Hwang, Sung‐Min Yoon
{"title":"Bending performance and bias-stress stability of the In-Ga-Zn-O TFTs prepared on flexible PEN substrates with optimum barrier structures","authors":"Min-Ji Park, Da-Jung Yun, M. Ryu, Jong-Heon Yang, JaeEun Pi, Gi-Hyun Kim, Chi-Sun Hwang, Sung‐Min Yoon","doi":"10.1109/AM-FPD.2015.7173213","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173213","url":null,"abstract":"The effects of barrier layers and channel compositions on the device performances including the bending characteristics and bias-stress stabilities were investigated for the flexible In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). The IGZO TFTs fabricated on the PEN treated with inorganic/organic double-layered barrier layer showed superior properties under the bending situation even at a curvature radius of 3.5 mm, which corresponded to the bending strain of 1.8 %. The IGZO channel composition was controlled by modulating the oxygen partial pressure during the sputtering process and the TFTs demonstrated highly stable performance at a O2/(Ar+O2) ratio of 2 %. The threshold shifts for the IGZO TFT were -0.1 and +0.1 V for negative- and positive-bias stress, respectively.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121938082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical properties of distributed inorganic EL devices with multi-stripe electrode 多条纹电极分布式无机EL器件的光学特性
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173206
T. Nonaka, Shin-ichi Yamamoto
{"title":"Optical properties of distributed inorganic EL devices with multi-stripe electrode","authors":"T. Nonaka, Shin-ichi Yamamoto","doi":"10.1109/AM-FPD.2015.7173206","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173206","url":null,"abstract":"In this study, we fabricated distributed inorganic EL device of conventional structure by using multi-stripe Al electrode. We deposited stripe electrode with narrow gaps on a glass substrate and succeeded in achieving the same electric field intensity as conventional structure. When we measured the luminescence from the side of the stripe electrodes, at 150V (frequency : 1.8 kHz), the luminance of electrode sample was 323 cd/m2 to that measured. Electrode transmittance was unnecessary by using the stripe electrodes, and it was possible to produce a display that did not require transparent ITO electrodes. Finally, we simulated the electric field distribution for the inorganic EL using stripe electrodes by semiconductor device simulator Atlas.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127241229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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