P-channel oxide thin film transistors using sol-gel solution processed nickel oxide

Abstract

Nickel oxide (NiO) thin film was synthesized on glass substrate by low-cost sol-gel solution process at 300 °C under ambient condition. The optical properties confirmed the high transparency over visible region and estimated optical band gap of 3.53 eV. Bottom-gate top-contact thin film transistors (TFTs) employing NiO film as active layer were fabricated via conventional photolithography. The electrical property of the NiO TFTs exhibited p-channel operation and field effect mobility of 0.077 cm2/V·s. This work reported the potential of NiO TFTs with p-channel characteristics using easily accessed solution process.