Kahori Kise, S. Tomai, H. Yamazaki, Satoshi Urakawa, K. Yano, Dapeng Wang, M. Furuta, M. Horita, M. Fujii, Y. Ishikawa, Y. Uraoka
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Analysis of self-heating phenomenon in oxide thin-film transistors under pulsed bias voltage
Degradation by Joule heating of amorphous metal oxide thin-film transistors is one of the important issues for realizing next-generation displays. To clarify the self-heating degradation mechanism, it is indispensable to analyze the detailed temperature change of TFTs. In this study, we proposed a technique to suppress deterioration caused by self-heating in terms of driving methods, and investigated relation on the temperature change in the degradation mechanism caused by self-heating.
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