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2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

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Study on hydrogenation after BLDA in Si TFT with metal source/drain 金属源/漏硅TFT中BLDA加氢的研究
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173208
K. Shimoda, Takuya Ashitomi, T. Okada, T. Noguchi, O. Nishikata, Atsushi Ota
{"title":"Study on hydrogenation after BLDA in Si TFT with metal source/drain","authors":"K. Shimoda, Takuya Ashitomi, T. Okada, T. Noguchi, O. Nishikata, Atsushi Ota","doi":"10.1109/AM-FPD.2015.7173208","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173208","url":null,"abstract":"Poly-Si TFTs (Thin Film Transistors) by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT was fabricated with low temperature process below 490°C using BLDA (Blue Multi Laser Diode Annealing) without adopting ion-implantation. In place of impurity doped Si film, Ti of low work-function metal was adopted for source and drain. Hydrogen annealing steps were performed and the resultant TFT performance was compared for each step after channel formation, after deposition of insulating film or after completed TFT formation to optimize the hydrogen annealing process. Higher TFT performance is expected by performing the pre-hydrogen annealing after channel formation and subsequent forming annealing after completing Al electrode below 400°C.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133113174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Threshold voltage shifts in top-gate Al-doped ZnO TFTs by adjusting the position of Al dopant layer during the atomic-layer deposition process 在原子层沉积过程中，通过调整Al掺杂层的位置，顶栅Al掺杂ZnO tft的阈值电压发生了变化
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173188
Eom-Ji Kim, Sung‐Min Yoon
{"title":"Threshold voltage shifts in top-gate Al-doped ZnO TFTs by adjusting the position of Al dopant layer during the atomic-layer deposition process","authors":"Eom-Ji Kim, Sung‐Min Yoon","doi":"10.1109/AM-FPD.2015.7173188","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173188","url":null,"abstract":"We investigated the effects of controlling the relative positions of Al dopant layers on the device characteristics of the thin-film transistors using Al-doped ZnO (AZO) active channels for the first time. The position control was accomplished by the cycle designs of atomic-layer deposition process for the AZO channels. When the Al dopant layer was positioned at relative bottom sides of the channel, the turn-on operations were performed at smaller negative gate voltages in their transfer characteristics. Other device properties including the positive bias stability did not show any marked variations among the devices. The distance between the incorporated Al dopant layers had also impacts on the TFT characteristics. Concentrated positioning of two cycles of Al doping layers was found to severely degrade the current drivability due to the decrease in carrier mobility. Further optimization of this technique would be very helpful to enhance the device performance of the AZO TFTs for practical transparent electronics applications.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123071491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strong light of red up-conversion in a ZnO-TiO2 composite containing Er3+ and Yb3+ 含有Er3+和Yb3+的ZnO-TiO2复合材料中红色上转换的强光
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173204
Keito Ohyama, T. Nonaka, T. Kanamori, Shin-ichi Yamamoto
{"title":"Strong light of red up-conversion in a ZnO-TiO2 composite containing Er3+ and Yb3+","authors":"Keito Ohyama, T. Nonaka, T. Kanamori, Shin-ichi Yamamoto","doi":"10.1109/AM-FPD.2015.7173204","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173204","url":null,"abstract":"The up-conversion (UC) phosphor produced by a metal-organic decomposition (MOD) method has a multifunctional potential for use in applications such as displays and solid-state lighting. ZnO-TiO<sub>2</sub> composite system containing Er<sup>3+</sup> and Yb<sup>3+</sup> were prepared by solid state reaction method, and the composite phosphor shows bright red UC emission under 980 nm laser pumping. Two photon process was involved in the UC phenomenon of the Er, Yb:ZnO-TiO<sub>2</sub> phosphor. The effects of heating temperature, ZnO/TiO<sub>2</sub> composition and Er<sup>3+</sup>, Yb<sup>3+</sup> concentrations on the UC emission behavior were examined. The ZnO-TiO<sub>2</sub> composite product sintered at 900 °C contained Zn<sub>2</sub>TiO<sub>4</sub>, TiO<sub>2</sub> and RE<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> (RE = Er<sup>3+</sup> and Yb<sup>3+</sup>) phases and exhibited strong red emissions. The maximum emission luminescence of the UC phosphor was obtained when the mixing ratios of the base materials TiO<sub>2</sub> : ZnO and additive materials Yb<sub>2</sub>O<sub>3</sub> : Er<sub>2</sub>O<sub>3</sub> were 1 : 1 and 0:06 : 0:02, respectively. The ZnO-TiO<sub>2</sub>:Er<sup>3+</sup>, Yb<sup>3+</sup> phosphor was compared to the brightest available phosphor. It suggests that ZnO-TiO<sub>2</sub>:Er<sup>3+</sup>, Yb<sup>3+</sup> is a potential material for the red up-conversion phosphor.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128511884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Efficiency enhancement of top-incident organic photovoltaics using multiple reflection design for exhausting incident photons 利用多重反射设计来提高顶入射有机光伏电池的效率
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173235
Tien‐Lung Chiu, Mi Zhang, Chia-Hsun Chen
{"title":"Efficiency enhancement of top-incident organic photovoltaics using multiple reflection design for exhausting incident photons","authors":"Tien‐Lung Chiu, Mi Zhang, Chia-Hsun Chen","doi":"10.1109/AM-FPD.2015.7173235","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173235","url":null,"abstract":"A significant efficiency enhancement of the small-molecule top-incident organic photovoltaic (TIOPV) module is demonstrated by utilizing a light harvesting design with multiple reflections to effectively exhaust the incident photons. In this design, the reflection from one OPV is the incident light for another OPV in this light harvesting design. Adjusting the thickness of active layers sandwiched in between reflective Ag anode and semitransparent Ag cathode, the internal optical filed distribution and external reflection spectrum have been rearranged for a single TIOPV. The external reflection photon energy could be partially absorbed by the next TIOPV device to generate the conversion photocurrent. The original incident photon energy could be exhausted after a sequence of reflections, converting to photocurrent.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125871408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis of flexible graphene transparent conductive films by using plasma technique 用等离子体技术合成柔性石墨烯透明导电薄膜
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173194
M. Hasegawa, R. Kato, Yuki Okigawa, S. Minami, M. Ishihara, T. Yamada
{"title":"Synthesis of flexible graphene transparent conductive films by using plasma technique","authors":"M. Hasegawa, R. Kato, Yuki Okigawa, S. Minami, M. Ishihara, T. Yamada","doi":"10.1109/AM-FPD.2015.7173194","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173194","url":null,"abstract":"In this paper we review the development of synthesis technique of highly-electrically conductive graphene by plasma assisted chemical vapor deposition (CVD). Graphene with high electrical conductivity has been synthesized by using hydrogen plasma treatment of copper foils for 30 seconds at the temperature of 850 °C together with joule-heating treatment of the foils without using a carbon-containing gas such as methane in order to suppress the nucleation density of graphene. The electrical conductivity has been significantly improved by this method. The sheet resistance of bilayer graphene exhibits 951 Ω in average. The carrier mobility shows 1000 cm2/Vs in maximum at room temperature. The sheet resistance of 130±26 Ω has been attained after the doping by gold chloride solution. We have demonstrated flexible heater by using graphene transparent conductive films.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122530200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-temperature metal double-gate junctionless p-channel polycrystalline-germanium thin-film transistors with high-k gate dielectric on glass substrate 低温金属双栅无结p沟道高k栅介电介质玻璃基板多晶锗薄膜晶体管
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173250
Yuya Nishimura, S. Nibe, A. Hara
{"title":"Low-temperature metal double-gate junctionless p-channel polycrystalline-germanium thin-film transistors with high-k gate dielectric on glass substrate","authors":"Yuya Nishimura, S. Nibe, A. Hara","doi":"10.1109/AM-FPD.2015.7173250","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173250","url":null,"abstract":"Germanium (Ge) is one of the candidates for the next-generation thin-film transistors (TFTs) for the backplane of a flat panel display because of the superior electrical properties of bulk Ge compared to those of silicon (Si) and oxide semiconductors. In this study, low-temperature (LT), metal double-gate (MeDG), junctionless (JL), p-channel (p-ch) polycrystalline-Ge (poly-Ge) TFTs were fabricated on a glass substrate and successfully operated with a high on-off ratio compared to that of LT, top-gate, JL, p-ch poly-Ge TFTs.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129531245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The influence of annealing temperature and film thickness on crystallization behaviors of IGZO thin films 退火温度和薄膜厚度对IGZO薄膜结晶行为的影响
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173226
Jaeseung Jo, JaeYu Cho, Hee Kyeung Hong, Sungman Kim, Je-ho Lee, J. Lim, Ju-Hyun Song, J. H. Kim, Jaeyeong Heo
{"title":"The influence of annealing temperature and film thickness on crystallization behaviors of IGZO thin films","authors":"Jaeseung Jo, JaeYu Cho, Hee Kyeung Hong, Sungman Kim, Je-ho Lee, J. Lim, Ju-Hyun Song, J. H. Kim, Jaeyeong Heo","doi":"10.1109/AM-FPD.2015.7173226","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173226","url":null,"abstract":"The influence of the thermal annealing temperature on the crystallization behaviors of indium gallium zinc oxide (IGZO) thin films was investigated. The IGZO was deposited by rf-magnetron sputtering and the films were annealed by conventional furnace at 400-850 °C for 1hr. X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the change in crystallinity occurs at ~700 °C. Over 700 °C, the XRD showed that the IGZO films change from of amorphous to of polycrystalline state. When the film thickness is decreased down to ~10 nm, c-axis preferred orientation was formed.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131251435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Outlook of solar PV technology: From material to system 太阳能光伏技术展望:从材料到系统
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173181
M. Kondo
{"title":"Outlook of solar PV technology: From material to system","authors":"M. Kondo","doi":"10.1109/AM-FPD.2015.7173181","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173181","url":null,"abstract":"This paper provides an aspect of coming PV technology taking into account the paradigm shift of recent PV industry and market, i.e. material to system. In the early stage of the PV technology, the solar cell material and device for aiming at higher efficiency and lower cost have been emphasized, because more than 60% of the total cost is shared by solar cells. As the cost of solar cells is going down significantly, the emphasis is shifting from material and device toward system. In this paper, the current issue and outlook of the PV technology are overviewed.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133146211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Doping stability and opto-electronic performance of chemical vapour deposited graphene for plastic electronic applications 塑料电子用化学气相沉积石墨烯的掺杂稳定性和光电性能
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173251
M. H. Kang, W. Milne, M. Cole
{"title":"Doping stability and opto-electronic performance of chemical vapour deposited graphene for plastic electronic applications","authors":"M. H. Kang, W. Milne, M. Cole","doi":"10.1109/AM-FPD.2015.7173251","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173251","url":null,"abstract":"We report the transfer of chemical vapour deposited graphene to polymer supports by utilizing thermal and ultraviolet (UV) laminate techniques. The time-dependent evolution of the opto-electronic performance was assessed following exposure to five kinds of common dopants, FeCl3, SnCl2 IrCl3, RhCl3, and AuCl3. In general, the doping markedly reduced the sheet resistance, with the exception of IrCl3 doping, thereby offering a means of realising viable transparent flexible conductors that can be used in the production of OLEDs and other devices.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114081668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Graphene/transition metal dichalcogenide/metal vertical heterostructure transistor with large current ON/OFF ratio 具有大电流开/关比的石墨烯/过渡金属二硫化物/金属垂直异质结构晶体管
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI: 10.1109/AM-FPD.2015.7173195
R. Moriya, Y. Sata, Takehiro Yamaguchi, Y. Inoue, Naoto Yabuki, Sei Morikawa, S. Masubuchi, T. Machida
{"title":"Graphene/transition metal dichalcogenide/metal vertical heterostructure transistor with large current ON/OFF ratio","authors":"R. Moriya, Y. Sata, Takehiro Yamaguchi, Y. Inoue, Naoto Yabuki, Sei Morikawa, S. Masubuchi, T. Machida","doi":"10.1109/AM-FPD.2015.7173195","DOIUrl":"https://doi.org/10.1109/AM-FPD.2015.7173195","url":null,"abstract":"We demonstrated exfoliated-graphene/transition metal dichalcogenide (TMD)/metal vertical field-effect transistor (vFET). The van der Waals junction between graphene and TMD exhibit Schottky barrier. Owing to the low density of state of graphene, the position of graphene's Fermi level can be modulated by the external electric field, thus enable us electric field modulation of Schottky barrier height at graphene/TMD interface. Based on this mechanism, a vertical transport in the heterostructure exhibits large current modulation of 105, and at the same time the heterostructure reveal operation current density of 104 A/cm2. These results reveal potential high performance of vFET for flexible electronics applications.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124871040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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