The influence of annealing temperature and film thickness on crystallization behaviors of IGZO thin films

Abstract

The influence of the thermal annealing temperature on the crystallization behaviors of indium gallium zinc oxide (IGZO) thin films was investigated. The IGZO was deposited by rf-magnetron sputtering and the films were annealed by conventional furnace at 400-850 °C for 1hr. X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the change in crystallinity occurs at ~700 °C. Over 700 °C, the XRD showed that the IGZO films change from of amorphous to of polycrystalline state. When the film thickness is decreased down to ~10 nm, c-axis preferred orientation was formed.