金属源/漏硅TFT中BLDA加氢的研究

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173208

K. Shimoda, Takuya Ashitomi, T. Okada, T. Noguchi, O. Nishikata, Atsushi Ota

{"title":"金属源/漏硅TFT中BLDA加氢的研究","authors":"K. Shimoda, Takuya Ashitomi, T. Okada, T. Noguchi, O. Nishikata, Atsushi Ota","doi":"10.1109/AM-FPD.2015.7173208","DOIUrl":null,"url":null,"abstract":"Poly-Si TFTs (Thin Film Transistors) by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT was fabricated with low temperature process below 490°C using BLDA (Blue Multi Laser Diode Annealing) without adopting ion-implantation. In place of impurity doped Si film, Ti of low work-function metal was adopted for source and drain. Hydrogen annealing steps were performed and the resultant TFT performance was compared for each step after channel formation, after deposition of insulating film or after completed TFT formation to optimize the hydrogen annealing process. Higher TFT performance is expected by performing the pre-hydrogen annealing after channel formation and subsequent forming annealing after completing Al electrode below 400°C.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study on hydrogenation after BLDA in Si TFT with metal source/drain\",\"authors\":\"K. Shimoda, Takuya Ashitomi, T. Okada, T. Noguchi, O. Nishikata, Atsushi Ota\",\"doi\":\"10.1109/AM-FPD.2015.7173208\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Poly-Si TFTs (Thin Film Transistors) by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT was fabricated with low temperature process below 490°C using BLDA (Blue Multi Laser Diode Annealing) without adopting ion-implantation. In place of impurity doped Si film, Ti of low work-function metal was adopted for source and drain. Hydrogen annealing steps were performed and the resultant TFT performance was compared for each step after channel formation, after deposition of insulating film or after completed TFT formation to optimize the hydrogen annealing process. Higher TFT performance is expected by performing the pre-hydrogen annealing after channel formation and subsequent forming annealing after completing Al electrode below 400°C.\",\"PeriodicalId\":243757,\"journal\":{\"name\":\"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2015.7173208\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2015.7173208","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在玻璃和柔性面板上都需要低成本的多晶硅薄膜晶体管(tft)。在不采用离子注入的情况下，采用BLDA (Blue Multi Laser Diode退火)技术，采用490℃以下的低温工艺制备了顶栅型TFT。采用低功函数金属Ti代替掺杂杂质的Si薄膜作为源极和漏极。进行了氢退火步骤，并比较了通道形成后、绝缘膜沉积后和TFT完全形成后各步骤的TFT性能，以优化氢退火工艺。通过在通道形成后进行预氢退火和在400°C以下完成Al电极后进行后续成形退火，期望获得更高的TFT性能。

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Study on hydrogenation after BLDA in Si TFT with metal source/drain

Poly-Si TFTs (Thin Film Transistors) by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT was fabricated with low temperature process below 490°C using BLDA (Blue Multi Laser Diode Annealing) without adopting ion-implantation. In place of impurity doped Si film, Ti of low work-function metal was adopted for source and drain. Hydrogen annealing steps were performed and the resultant TFT performance was compared for each step after channel formation, after deposition of insulating film or after completed TFT formation to optimize the hydrogen annealing process. Higher TFT performance is expected by performing the pre-hydrogen annealing after channel formation and subsequent forming annealing after completing Al electrode below 400°C.

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2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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