Synthesis of flexible graphene transparent conductive films by using plasma technique

In this paper we review the development of synthesis technique of highly-electrically conductive graphene by plasma assisted chemical vapor deposition (CVD). Graphene with high electrical conductivity has been synthesized by using hydrogen plasma treatment of copper foils for 30 seconds at the temperature of 850 °C together with joule-heating treatment of the foils without using a carbon-containing gas such as methane in order to suppress the nucleation density of graphene. The electrical conductivity has been significantly improved by this method. The sheet resistance of bilayer graphene exhibits 951 Ω in average. The carrier mobility shows 1000 cm2/Vs in maximum at room temperature. The sheet resistance of 130±26 Ω has been attained after the doping by gold chloride solution. We have demonstrated flexible heater by using graphene transparent conductive films.