具有大电流开/关比的石墨烯/过渡金属二硫化物/金属垂直异质结构晶体管

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173195

R. Moriya, Y. Sata, Takehiro Yamaguchi, Y. Inoue, Naoto Yabuki, Sei Morikawa, S. Masubuchi, T. Machida

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引用次数: 0

摘要

我们展示了剥落石墨烯/过渡金属二硫化物(TMD)/金属垂直场效应晶体管(vFET)。石墨烯与TMD之间的范德华结表现出肖特基势垒。由于石墨烯的低密度态，可以通过外电场调制石墨烯费米能级的位置，从而实现电场对石墨烯/TMD界面处肖特基势垒高度的调制。基于该机制，异质结构中的垂直输运表现出105的大电流调制，同时异质结构显示出104 a /cm2的工作电流密度。这些结果揭示了vFET在柔性电子应用中的高性能潜力。

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Graphene/transition metal dichalcogenide/metal vertical heterostructure transistor with large current ON/OFF ratio

We demonstrated exfoliated-graphene/transition metal dichalcogenide (TMD)/metal vertical field-effect transistor (vFET). The van der Waals junction between graphene and TMD exhibit Schottky barrier. Owing to the low density of state of graphene, the position of graphene's Fermi level can be modulated by the external electric field, thus enable us electric field modulation of Schottky barrier height at graphene/TMD interface. Based on this mechanism, a vertical transport in the heterostructure exhibits large current modulation of 105, and at the same time the heterostructure reveal operation current density of 104 A/cm2. These results reveal potential high performance of vFET for flexible electronics applications.

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2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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