退火温度和薄膜厚度对IGZO薄膜结晶行为的影响

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173226

Jaeseung Jo, JaeYu Cho, Hee Kyeung Hong, Sungman Kim, Je-ho Lee, J. Lim, Ju-Hyun Song, J. H. Kim, Jaeyeong Heo

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引用次数: 0

摘要

研究了热退火温度对氧化铟镓锌(IGZO)薄膜结晶行为的影响。采用射频磁控溅射法制备IGZO薄膜，并在400 ~ 850℃常规炉中退火1hr。x射线衍射(XRD)和透射电镜(TEM)证实，结晶性在~700℃发生变化。在700℃以上，XRD表明IGZO薄膜由非晶态转变为多晶态。当膜厚减小到~10 nm时，形成c轴择优取向。

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The influence of annealing temperature and film thickness on crystallization behaviors of IGZO thin films

The influence of the thermal annealing temperature on the crystallization behaviors of indium gallium zinc oxide (IGZO) thin films was investigated. The IGZO was deposited by rf-magnetron sputtering and the films were annealed by conventional furnace at 400-850 °C for 1hr. X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the change in crystallinity occurs at ~700 °C. Over 700 °C, the XRD showed that the IGZO films change from of amorphous to of polycrystalline state. When the film thickness is decreased down to ~10 nm, c-axis preferred orientation was formed.

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来源期刊

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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