双栅a-IGZO TFTs中顶栅偏置对NBIS的影响

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173215

Eunji Lee, Md Delwar Hossain Chowdhury, Jin Jang

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引用次数: 0

摘要

本文报道了双栅极非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(TFT)中顶栅极偏压(VTG)对下栅极端施加负偏压照明应力(NBIS)的影响，并测量了应力前后下栅极端的传输特性。由于正电荷的形成、氧空位(VO→VO+/VO2+)的可能电离和/或Gate绝缘体/a-IGZO界面和a-IGZO体中的空穴陷阱，a-IGZO TFTs中的NBIS表现出负转移位移。我们观察到，当VTG的偏置为-10V时，NBIS后的偏移量为-3.26V，当VTG = +10V时，偏移量降至-1.3V。这清楚地揭示了当费米能级被正顶栅偏置向上移动时，IGZO沟道中缺陷的形成较少。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of top gate bias on NBIS in dual gate a-IGZO TFTs

We report the effects of top gate bias (V_TG) on negative bias illumination stress (NBIS) applied at bottom gate terminal in dual gate amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT), while transfer characteristics measured at bottom gate terminal before and after stress. NBIS in a-IGZO TFTs show negative transfer shift due to the formation of positive charges, likely ionization of oxygen vacancies (V_O → V_O⁺/V_O²⁺) and/or hole traps in Gate insulator/a-IGZO interface and a-IGZO bulk. We observed -3.26V shift after NBIS, for -10V bias at VTG, which decreases to -1.3V for V_TG = +10V. It clearly revels the formation of less defects in IGZO channel when the Fermi level is shifted upward by positive top gate bias.

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来源期刊

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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