Yanfa Yan, W. Yin, T. Shi, F. Hong, J. Ge, Y. Yue, W. Ke, D. Zhao, A. Cimaroli
{"title":"地球上丰富的太阳能电池材料的理论和实验研究","authors":"Yanfa Yan, W. Yin, T. Shi, F. Hong, J. Ge, Y. Yue, W. Ke, D. Zhao, A. Cimaroli","doi":"10.1109/AM-FPD.2015.7173196","DOIUrl":null,"url":null,"abstract":"In this paper, we present theoretical and experimental studies of two representative earth-abundant, thin-film solar cell materials: Cu<sub>2</sub>ZnSnS<sub>4</sub> and CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>. Using first-principles density-functional theory, we show that both Cu<sub>2</sub>ZnSnS<sub>4</sub> and CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> exhibit electronic and optical properties that are suitable for solar cell applications. However, the defect physics are rather different in these two earth-abundant solar cell materials: the dominant defects produce deep gap states in Cu<sub>2</sub>ZnSnS<sub>4</sub> but only shallow states in CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>, indicating that CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> is a more promising candidate for achieving high efficiency solar cells. Through the synthesis and characterization of Cu<sub>2</sub>ZnSnS<sub>4</sub> and CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based thin-film solar cells, we show that CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based thin-film solar cells exhibit significantly higher performance than Cu<sub>2</sub>ZnSnS<sub>4</sub>-based solar cells.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Theoretical and experimental study of earth-abundant solar cell materials\",\"authors\":\"Yanfa Yan, W. Yin, T. Shi, F. Hong, J. Ge, Y. Yue, W. Ke, D. Zhao, A. Cimaroli\",\"doi\":\"10.1109/AM-FPD.2015.7173196\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present theoretical and experimental studies of two representative earth-abundant, thin-film solar cell materials: Cu<sub>2</sub>ZnSnS<sub>4</sub> and CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>. Using first-principles density-functional theory, we show that both Cu<sub>2</sub>ZnSnS<sub>4</sub> and CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> exhibit electronic and optical properties that are suitable for solar cell applications. However, the defect physics are rather different in these two earth-abundant solar cell materials: the dominant defects produce deep gap states in Cu<sub>2</sub>ZnSnS<sub>4</sub> but only shallow states in CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>, indicating that CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> is a more promising candidate for achieving high efficiency solar cells. Through the synthesis and characterization of Cu<sub>2</sub>ZnSnS<sub>4</sub> and CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based thin-film solar cells, we show that CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based thin-film solar cells exhibit significantly higher performance than Cu<sub>2</sub>ZnSnS<sub>4</sub>-based solar cells.\",\"PeriodicalId\":243757,\"journal\":{\"name\":\"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"113 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2015.7173196\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2015.7173196","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Theoretical and experimental study of earth-abundant solar cell materials
In this paper, we present theoretical and experimental studies of two representative earth-abundant, thin-film solar cell materials: Cu2ZnSnS4 and CH3NH3PbI3. Using first-principles density-functional theory, we show that both Cu2ZnSnS4 and CH3NH3PbI3 exhibit electronic and optical properties that are suitable for solar cell applications. However, the defect physics are rather different in these two earth-abundant solar cell materials: the dominant defects produce deep gap states in Cu2ZnSnS4 but only shallow states in CH3NH3PbI3, indicating that CH3NH3PbI3 is a more promising candidate for achieving high efficiency solar cells. Through the synthesis and characterization of Cu2ZnSnS4 and CH3NH3PbI3-based thin-film solar cells, we show that CH3NH3PbI3-based thin-film solar cells exhibit significantly higher performance than Cu2ZnSnS4-based solar cells.