单次KrF激光处理用于皮瓦灵敏度紫外光检测的纳米晶CdS

Keng-Te Lin, Hsuen‐Li Chen, Yu-Lun Liu, Y. Tseng, Cheng-Hsi Lin, H. Chang, Jui-Min Liu, Y. Lai
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引用次数: 0

摘要

在本研究中,我们证明了硫化镉(cd)光导体在紫外(UV)区检测能力的提高远远大于可见光区,这表明深紫外激光处理的CdS器件非常适合在紫外区进行弱光检测。此外,我们确定了纳米晶化的CdS光导体在KrF激光的单次照射下,在CdS薄膜的超浅区结晶后,可以在紫外区表现为皮瓦敏感探测器。本文提出的策略在开发用于皮瓦级低功耗紫外光检测的CdS光导体方面具有很大的应用潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nanocrystallized CdS for detection of UV light with picowatt sensitivity through single shot KrF laser treatment
In this study we demonstrated that the improvement of detection capability of cadmium sulfide (CdS) photoconductors in the ultraviolet (UV) regime is much larger than that in the visible regime, suggesting that the deep UV laser treated CdS devices are very suitable for low-light detection in the UV regime. In addition, we determined that a nanocrystallized CdS photoconductor can behave as a picowatt-sensitive detector in the UV regime after ultra-shallow-region crystallization of the CdS film upon a single shot from a KrF laser. The strategy proposed herein appears to have great potential for application in the development of CdS photoconductors for picowatt-level detection of UV light with low power consumption.
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