使用c轴对齐晶体氧化物半导体的柔性显示器

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173244

J. Koezuka, K. Okazaki, Satoru Idojiri, Y. Shima, Kei Takahashi, Daiki Nakamura, S. Yamazaki

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引用次数: 0

摘要

我们开发了一种c轴排列晶体In-Ga-Zn氧化物(CAAC-IGZO)，其新成分比传统的CAAC-IGZO FET具有更高的场效应迁移率。在有源层中使用新的CAAC-IGZO可以产生具有高迁移率、常关特性和高可靠性的沟道蚀刻场效应晶体管(FET)。我们制作了13.3英寸8K 664 ppi可折叠有机发光二极管(OLED)显示面板和世界上最大的81英寸8K有机发光二极管河原型多显示器，包括白色顶发射OLED和彩色滤光片，采用高迁移率CAAC-IGZO场效应管在背板上使用基于无机分离层的转移技术。

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Flexible displays using c-axis-aligned-crystal oxide semiconductors

We developed a c-axis-aligned-crystal In-Ga-Zn oxide (CAAC-IGZO) with a new composition that achieved higher field-effect mobility than a conventional CAAC-IGZO FET. The use of the new CAAC-IGZO for an active layer results in a channel-etched field-effect transistor (FET) with high mobility, normally-off characteristics, and high reliability. We fabricated a 13.3-inch 8K 664-ppi foldable organic light-emitting diode (OLED) display panel and the world's largest 81-inch 8K OLED kawara-type multi-display comprising white top-emission OLEDs with color filters employing the high-mobility CAAC-IGZO FETs in the backplane and using a transfer technology based on an inorganic separation layer.

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来源期刊

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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