Fully-transparent Mo-doped ZnO TFTs fabricated in different oxygen partial pressure at low temperature

Abstract

Fully-transparent Mo-doped ZnO (MZO) thin film transistors (TFTs) have been successfully fabricated on glass substrate by radio frequency Magnetron Sputtering at room temperature and its characteristics have been studied in different oxygen partial pressure. The results show that the MZO TFTs which were deposited at low oxygen partial pressure (10%) have excellent performance such as subthreshold swing of 388 mV/decade, the saturation mobility of 5.8 cm2/V·s, the threshold voltage of 3.97 V, the Ioff value of 5×10-12 A, and the on/off current ratio of 2.4×107. To identify properties of the film formed at oxygen partial pressure of 10%, X-ray diffraction, scan electron microscopy, and transmittance were used to investigate the microstructure of the films. All conclusions suggest that MZO TFTs will become a promising candidate for TFT-LCD.