金属氧化物薄膜晶体管的低温工艺

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173191

N. Fruehauf, M. Herrmann, H. Baur, M. Aman

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引用次数: 1

摘要

在160°C的高通量溅射非晶氧化物薄膜晶体管中实现欧姆漏源触点和多层介质的工艺，并结合了反向通道蚀刻工艺。这些晶体管的载流子迁移率为8.6 cm2/Vs，亚阈值斜率为0.18 V/dec，阈值电压为2.54 V，开/关比高于107。所选择的反通道蚀刻方法也可以扩展到用于漏极/源金属，如钼或铜。

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Low temperature processes for metal-oxide thin film transistors

Processes for realizing ohmic drain/source contacts and a multilayer dielectric for sputtered amorphous oxide thin film transistors with high throughput at 160°C combined with a back-channel etch process have been demonstrated. These transistors achieve a carrier mobility of 8.6 cm2/Vs, a subthreshold slope of 0.18 V/dec, threshold voltage of 2.54 V and on/off ratio above 107. The chosen backchannel etch approach can also be extended to be used with drain/source metals such as molybdenum or copper.

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来源期刊

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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