Flexible displays using c-axis-aligned-crystal oxide semiconductors

Abstract

We developed a c-axis-aligned-crystal In-Ga-Zn oxide (CAAC-IGZO) with a new composition that achieved higher field-effect mobility than a conventional CAAC-IGZO FET. The use of the new CAAC-IGZO for an active layer results in a channel-etched field-effect transistor (FET) with high mobility, normally-off characteristics, and high reliability. We fabricated a 13.3-inch 8K 664-ppi foldable organic light-emitting diode (OLED) display panel and the world's largest 81-inch 8K OLED kawara-type multi-display comprising white top-emission OLEDs with color filters employing the high-mobility CAAC-IGZO FETs in the backplane and using a transfer technology based on an inorganic separation layer.