柔性电子用不同弯曲曲率复合A - igzo tft的研究

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173214

Wan-Chen Huang, Shuo Sun, Chun-Cheng Cheng, Chu-Yu Liu, M. Chiang

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引用次数: 2

摘要

在塑料衬底上演示了具有复合结构的岛栅a-IGZO薄膜晶体管(TFTs)。该工艺的最高退火温度控制在220℃。在弯曲半径为10 mm的压缩应变下，测量了复合a-IGZO tft的电特性。并进行了平行和垂直于通道的两种弯曲方向。最后，记录了机械应变对器件阈值电压和负偏置应力的影响。

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A study on corbino a-IGZO TFTs with different bending curvatures for flexible electronics

The Island-Stop a-IGZO Thin Film Transistors (TFTs) with the corbino architecture were demonstrated on plastic substrates. The highest annealed temperature of the process was controlled at 220 °C. The electrical characteristics of corbino a-IGZO TFTs were measured under the compressive strain down to the bending radius of 10 mm. And two kinds of bending directions including parallel and perpendicular to the channel were performed. Finally, the influences of mechanical strains on the threshold voltage and the negative bias stress (NBS) of these devices were recorded.

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2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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