A study on corbino a-IGZO TFTs with different bending curvatures for flexible electronics

Abstract

The Island-Stop a-IGZO Thin Film Transistors (TFTs) with the corbino architecture were demonstrated on plastic substrates. The highest annealed temperature of the process was controlled at 220 °C. The electrical characteristics of corbino a-IGZO TFTs were measured under the compressive strain down to the bending radius of 10 mm. And two kinds of bending directions including parallel and perpendicular to the channel were performed. Finally, the influences of mechanical strains on the threshold voltage and the negative bias stress (NBS) of these devices were recorded.