Low temperature processes for metal-oxide thin film transistors

Abstract

Processes for realizing ohmic drain/source contacts and a multilayer dielectric for sputtered amorphous oxide thin film transistors with high throughput at 160°C combined with a back-channel etch process have been demonstrated. These transistors achieve a carrier mobility of 8.6 cm2/Vs, a subthreshold slope of 0.18 V/dec, threshold voltage of 2.54 V and on/off ratio above 107. The chosen backchannel etch approach can also be extended to be used with drain/source metals such as molybdenum or copper.